General Purpose
Transistors
NPN Silicon
BCH817-16L/25L/40L,
NSVBCH817-16L/25L/40L
www.onsemi.com
Features
• 175°C T
− Rated for High Temperature, Mission Critical
J(max)
Applications
COLLECTOR
3
• NSV Prefixes for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
1
BASE
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
45
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
V
CEO
V
CBO
V
EBO
V
V
3
50
1
5.0
500
1
V
2
Collector Current − Continuous
Collector Current − Peak
I
C
mAdc
A
SOT−23
CASE 318
STYLE 6
I
CM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P
D
MARKING DIAGRAM
(Note 1) T = 25°C
225
1.3
mW
mW/°C
A
Derate above 25°C
XXX M G
Thermal Resistance,
R
400
°C/W
q
JA
Junction−to−Ambient
G
1
Total Device Dissipation
P
D
Alumina Substrate, (Note 2)
T = 25°C
300
1.8
mW
mW/°C
XXX = Device Code
A
Derate above 25°C
M
= Date Code*
G
= Pb−Free Package
Thermal Resistance,
R
330
°C/W
q
JA
Junction−to−Ambient
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Junction and Storage Temperature
T , T
−55 to +175
°C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
February, 2020 − Rev. 0
BCH817−16LT1/D