General Purpose
Transistors
PNP Silicon
BCH807-16L/25L/40L,
NSVBCH807-16L/25L/40L
www.onsemi.com
Features
• 175°C T
− Rated for High Temperature, Mission Critical
J(max)
Applications
COLLECTOR
3
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
1
BASE
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
−45
Unit
V
3
Collector − Emitter Voltage
Collector − Base Voltage
V
CEO
V
CBO
V
EBO
−50
V
1
2
Emitter − Base Voltage
−5.0
−500
−800
V
SOT−23
CASE 318
STYLE 6
Collector Current − Continuous
Collector Current − Peak
I
C
mAdc
mA
I
CM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MARKING DIAGRAM
Total Device Dissipation FR−5 Board,
P
D
(Note 1) T = 25°C
Derate above 25°C
225
1.3
mW
mW/°C
A
XXX M G
Thermal Resistance,
Junction−to−Ambient (Note 1)
R
400
°C/W
q
JA
G
1
Total Device Dissipation Alumina
P
D
Substrate, (Note 1) T = 25°C
Derate above 25°C
300
1.8
mW
mW/°C
A
XXX = Device Code
M
= Date Code*
G
= Pb−Free Package
Thermal Resistance,
Junction−to−Ambient (Note 2)
R
330
°C/W
q
JA
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Junction and Storage Temperature
T , T
−55 to +175
°C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. FR−4 Board, 1 oz. Cu, 100mm .
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
February, 2020 − Rev. 0
BCH807−16LT1/D