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BCF32R PDF预览

BCF32R

更新时间: 2024-11-25 13:05:55
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
8页 46K
描述
TRANSISTOR 100 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

BCF32R 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.75
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:32 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
VCEsat-Max:0.25 VBase Number Matches:1

BCF32R 数据手册

 浏览型号BCF32R的Datasheet PDF文件第2页浏览型号BCF32R的Datasheet PDF文件第3页浏览型号BCF32R的Datasheet PDF文件第4页浏览型号BCF32R的Datasheet PDF文件第5页浏览型号BCF32R的Datasheet PDF文件第6页浏览型号BCF32R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BCF32  
NPN general purpose transistor  
1999 Apr 22  
Product specification  
Supersedes data of 1997 May 20  

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