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BCF30TRL PDF预览

BCF30TRL

更新时间: 2024-11-25 13:02:27
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管
页数 文件大小 规格书
8页 51K
描述
TRANSISTOR 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

BCF30TRL 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.29其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:32 V
配置:SINGLE最小直流电流增益 (hFE):215
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzVCEsat-Max:0.3 V
Base Number Matches:1

BCF30TRL 数据手册

 浏览型号BCF30TRL的Datasheet PDF文件第2页浏览型号BCF30TRL的Datasheet PDF文件第3页浏览型号BCF30TRL的Datasheet PDF文件第4页浏览型号BCF30TRL的Datasheet PDF文件第5页浏览型号BCF30TRL的Datasheet PDF文件第6页浏览型号BCF30TRL的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BCF29; BCF30  
PNP general purpose transistors  
1997 May 22  
Product specification  
Supersedes data of September 1994  
File under Discrete Semiconductors, SC04  

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