Datasheet > BCF240T

BCF240T

更新时间： 2024-10-02 01:17:51

品牌	Logo	应用领域
BEREX		功效
页数	文件大小	规格书
6页	447K
描述
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

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BCF240T 数据手册

BCF240T

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 2400 µm)

The BeRex BCF240T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 2400 micron gate

width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise

while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either

wideband or narrow-band applications. The BCF240T is produced using state of the art metallization and

devices from each wafer are screened to insure reliability. These chips utilize SI₃N₄passivation for

increased reliability.

Product Features

•

30.4 dBm Typical Output Power

9.8 dB Typical Power Gain @ 12 GHz

Low Phase Noise

0.3 X 2400 Micron Recessed Gate

Applications

•

Commercial

Military / Hi-Rel

Test & Measurement

DC CHARACTERISTIC (T_a= 25° C)

PARAMETER/TEST CONDITIONS

Saturated Drain Current (V_gs= 0V, V_ds= 2V)

MINIMUM

TYPICAL

MAXIMUM UNIT

I_dss

480

720

400

-2.0

-15

960

Transconductance (V_ds= 3V, V_gs= 50% I_dss

Pinch-off Voltage (I_ds= 2400 µA, V_ds= 3V)

)

-3.5

BV_gdDrain Breakdown Voltage (I_g= 2.4 mA, source open)

BV_gsSource Breakdown Voltage (I_g= 2.4 mA, drain open)

-11

-7

-10

R_th

Thermal Resistance (Au-Sn Eutectic Attach)

C/W

www.berex.com

BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595

January 2015

Specifications are subject to change without notice. ©BeRex 2015

Rev. 1.3

12 3 4 5 6

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