Datasheet > BCF080T_18

BCF080T_18

更新时间： 2024-11-26 01:17:51

品牌	Logo	应用领域
BEREX		功效
页数	文件大小	规格书
6页	382K
描述
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

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BCF080T_18 数据手册

BCF080T

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm)

The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 800 micron gate

width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise

while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either

wideband or narrow-band applications. The BCF080T is produced using state of the art metallization and

devices from each wafer are screened to insure reliability. These chips utilize SI₃N₄passivation for

increased reliability.

Product Features

•

26.0 dBm Typical Output Power

11.0 dB Typical Power Gain @ 12 GHz

Low Phase Noise

0.3 X 800 Micron Recessed Gate

Applications

•

Commercial

Military / Hi-Rel

Test & Measurement

DC CHARACTERISTIC (T_a= 25° C)

MINIMU

MAXIMU

PARAMETER/TEST CONDITIONS

Saturated Drain Current (V_gs= 0V, V_ds= 2V)

TYPICAL

UNIT

I_dss

160

100

-3.5

240

130

-2.0

-15

-10

320

Transconductance (V_ds= 3V, V_gs= 50% I_dss

Pinch-off Voltage (I_ds= 800 µA, V_ds= 3V)

)

BV_gd

BV_gs

R_th

Drain Breakdown Voltage (I_g= 0.8 mA, source open)

Source Breakdown Voltage (I_g= 0.8 mA, drain open)

Thermal Resistance (Au-Sn Eutectic Attach)

-11

-7

° C/W

www.berex.com

BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595

January 2015

Specifications are subject to change without notice. ©BeRex 2015

Rev. 1.3

12 3 4 5 6

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