Datasheet > BCF060T_18

BCF060T_18

更新时间： 2024-11-26 01:17:51

品牌	Logo	应用领域
BEREX		功效
页数	文件大小	规格书
6页	398K
描述
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BCF060T_18 数据手册

BCF060T

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm)

The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 600 micron gate

width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise

while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either

wideband or narrow-band applications. The BCF060T is produced using state of the art metallization and

devices from each wafer are screened to insure reliability. These chips utilize SI₃N₄passivation for

increased reliability.

Product Features

•

25.0 dBm Typical Output Power

12.5 dB Typical Power Gain @ 12 GHz

Low Phase Noise

0.3 X 600 Micron Recessed Gate

Applications

•

Commercial

Military / Hi-Rel

Test & Measurement

DC CHARACTERISTIC (T_a= 25° C)

PARAMETER/TEST CONDITIONS

Saturated Drain Current (V_gs= 0V, V_ds= 2V)

MINIMUM

TYPICAL

MAXIMUM UNIT

I_dss

100

170

100

-2.0

-15

-10

240

Transconductance (V_ds= 3V, V_gs= 50% I_dss

Pinch-off Voltage (I_ds= 300 µA, V_ds= 3V)

)

-3.5

BV_gd

BV_gs

R_th

Drain Breakdown Voltage (I_g= 0.2 mA, source open)

Source Breakdown Voltage (I_g= 0.2 mA, drain open)

Thermal Resistance (Au-Sn Eutectic Attach)

-11

-7

° C/W

www.berex.com

BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595

January 2015

Rev. 1.3

Specifications are subject to change without notice. ©BeRex 2015

12 3 4 5 6

中文翻译

下载PDF

与BCF060T_18相关器件

型号	品牌	获取价格	描述	数据表
BCF080T	BEREX	获取价格	HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
BCF080T_18	BEREX	获取价格	HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
BCF120T	BEREX	获取价格	HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
BCF120T_18	BEREX	获取价格	HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
BCF240T	BEREX	获取价格	HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
BCF240T_18	BEREX	获取价格	HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
BCF29	KEXIN	获取价格	PNP General Purpose Transistors
BCF29	TYSEMI	获取价格	Low current (max. 100 mA). Low voltage (max. 32 V).
BCF29	NXP	获取价格	PNP general purpose transistors
BCF29	DIOTEC	获取价格	Surface mount Si-Epitaxial PlanarTransistors