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BCF040T PDF预览

BCF040T

更新时间: 2024-10-04 01:17:51
品牌 Logo 应用领域
BEREX 功效
页数 文件大小 规格书
6页 377K
描述
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCF040T 数据手册

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BCF040T  
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 400 µm)  
The BeRex BCF040T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 400 micron gate  
width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise  
while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either  
wideband or narrow-band applications. The BCF040T is produced using state of the art metallization and  
devices from each wafer are screened to insure reliability. These chips utilize SI3N4 passivation for  
increased reliability.  
Product Features  
23.0 dBm Typical Output Power  
13 dB Typical Power Gain @ 12 GHz  
Low Phase Noise  
0.3 X 400 Micron Recessed Gate  
Applications  
Commercial  
Military / Hi-Rel  
Test & Measurement  
DC CHARACTERISTIC (Ta = 25° C)  
PARAMETER/TEST CONDITIONS  
MINIMUM  
TYPICAL  
MAXIMUM UNIT  
Idss  
Gm Transconductance (Vds = 3V, Vgs = 50% Idss  
Vp Pinch-off Voltage (Ids = 300 µA, Vds = 3V)  
Saturated Drain Current (Vgs = 0V, Vds = 2V)  
80  
50  
120  
70  
160  
mA  
mS  
V
)
-3.5  
-15  
-10  
-2.0  
-11  
-7  
-0.5  
V
BVgd Drain Breakdown Voltage (Ig = 0.2 mA, source open)  
BVgs Source Breakdown Voltage (Ig = 0.2 mA, drain open)  
V
Rth  
Thermal Resistance (Au-Sn Eutectic Attach)  
100  
° C/W  
www.berex.com  
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595  
January 2015  
Specifications are subject to change without notice. ©BeRex 2015  
Rev. 1.3  

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