Datasheet > BCF040T

BCF040T

更新时间： 2024-11-26 01:17:51

品牌	Logo	应用领域
BEREX		功效
页数	文件大小	规格书
6页	377K
描述
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

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BCF040T 数据手册

BCF040T

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 400 µm)

The BeRex BCF040T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 400 micron gate

width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise

while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either

wideband or narrow-band applications. The BCF040T is produced using state of the art metallization and

devices from each wafer are screened to insure reliability. These chips utilize SI₃N₄passivation for

increased reliability.

Product Features

•

23.0 dBm Typical Output Power

13 dB Typical Power Gain @ 12 GHz

Low Phase Noise

0.3 X 400 Micron Recessed Gate

Applications

•

Commercial

Military / Hi-Rel

Test & Measurement

DC CHARACTERISTIC (T_a= 25° C)

PARAMETER/TEST CONDITIONS

MINIMUM

TYPICAL

MAXIMUM UNIT

I_dss

Gm Transconductance (V_ds= 3V, V_gs= 50% I_dss

Vp Pinch-off Voltage (I_ds= 300 µA, V_ds= 3V)

Saturated Drain Current (V_gs= 0V, V_ds= 2V)

120

160

)

-3.5

-15

-10

-2.0

-11

-7

-0.5

BV_gdDrain Breakdown Voltage (I_g= 0.2 mA, source open)

BV_gsSource Breakdown Voltage (I_g= 0.2 mA, drain open)

R_th

Thermal Resistance (Au-Sn Eutectic Attach)

100

° C/W

www.berex.com

BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595

January 2015

Specifications are subject to change without notice. ©BeRex 2015

Rev. 1.3

12 3 4 5 6

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