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BCF030T PDF预览

BCF030T

更新时间: 2024-11-26 01:18:19
品牌 Logo 应用领域
BEREX 功效
页数 文件大小 规格书
6页 407K
描述
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCF030T 数据手册

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BCF030T  
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm)  
The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 300 micron gate  
width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise  
while providing high-gain and medium power from DC to 26.5 GHz frequency range. This product is well  
suited for either wideband or narrow-band applications. The BCF030T is produced using state of the art  
metallization and devices from each wafer are screened to insure reliability. These chips utilize SI3N4  
passivation for increased reliability.  
Product Features  
21.5 dBm Typical Output Power  
13.5 dB Typical Power Gain @ 12 GHz  
Low Phase Noise  
0.3 X 300 Micron Recessed Gate  
Applications  
Commercial  
Military / Hi-Rel  
Test & Measurement  
DC CHARACTERISTIC (Ta = 25° C)  
MINIMU  
M
MAXIMU  
M
PARAMETER/TEST CONDITIONS  
Saturated Drain Current (Vgs = 0V, Vds = 2V)  
TYPICAL  
UNIT  
Idss  
Gm  
Vp  
60  
35  
90  
50  
120  
mA  
mS  
V
Transconductance (Vds = 3V, Vgs = 50% Idss  
Pinch-off Voltage (Ids = 300 µA, Vds = 3V)  
)
-3.5  
-2.0  
-15  
-10  
120  
-0.5  
-11  
-7  
BVgd  
BVgs  
Rth  
Drain Breakdown Voltage (Ig = 0.2 mA, source open)  
Source Breakdown Voltage (Ig = 0.2 mA, drain open)  
Thermal Resistance (Au-Sn Eutectic Attach)  
V
V
° C/W  
www.berex.com  
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595  
January 2015  
Rev. 1.3  
Specifications are subject to change without notice. ©BeRex 2015  

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