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BCD

更新时间： 2024-01-21 12:43:10

品牌	Logo	应用领域
EDI		/
页数	文件大小	规格书
2页	48K
描述
100mA SILICON CARTRIDGE RECTIFIERS

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中文翻译

获取价格

数据手册

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BCD 数据手册

BCD RTD

100mA SILICON CARTRIDGE RECTIFIERS

SMALL SIZE MOLDED PACKAGE

PRV 8,000 TO 60,000 VOLTS

FAST RECOVERY (RTD SERIES)

LOW LEAKAGE

Peak

Max. Forward Voltage

EDI Type

Number

Leng th

Reve rse Volta ge

PRV (Volts )

Drop at 25 C And 100 mA

Fig. 3

VF (Vol ts)

STANDARD RECOVERY

BCD08

BCD10

BCD12

BCD15

BCD20

BCD25

BCD30

BCD35

BCD40

BCD45

BCD50

BCD60

8,000

10,0 00

12,0 00

15,0 00

20,0 00

25,000

30,0 00

35,0 00

40,0 00

45,0 00

50,0 00

60,0 00

1.00

1.63

2.13

2.63

3.13

3.63

4.13

4.63

5.13

6.13

200 NANOSE COND RECOVE RY (F IG.4)

RTD08

RTD10

RTD12

RTD15

RTD20

RTD25

RTD30

RTD35

RTD40

RTD45

RTD50

RTD60

8,000

10,0 00

12,0 00

15,0 00

20,0 00

25,0 00

30,0 00

35,0 00

40,0 00

45,0 00

50,0 00

60,0 00

1.00

1.63

2.13

2.63

3.13

3.63

4.13

4.63

5.13

6.13

100

110

RTD SERIES

FAST

BCD SERIES

ELECTRICAL CHARACTERISTICS

STANDARD

RECOVERY

(at TA

=25 C Unless Otherwise Specified)

(at T

=25 C Unless Otherwise Specified)

RECOVERY

Max. DC Reverse Current@ PRV and25 C, I

C, I

Max. DC Reverse Current @ PRV and 25

Max. DC Reverse Current@ PRV and100

Max. Reverse Recovery Time , Trr (Fig.4)

C, I

Max. DC Reverse Current@ PRV and100

100

to +125

Ambient Operating Temperature Range,T

200 nanosec

-55

to +150

to +125

Ambient Operating Temperature Range,T_A

Storage Temperature Range, T

STG

-55

to +150

Max.One-Half Cycle Surge Current,

I_FM

Storage Temperature Range, T

STG

Amps

(Surge )@ 60Hz

Max.One-HalfCycle Surge Current,

I_FM

10 Amps

(Surge )@ 60Hz

Forward Current Repetitive Peak,I _FRM

Amps

Forward Current Repetitive Peak,I_FRM

EDI reserves the right to change these specifications at any time without notice.

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