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BC877 PDF预览

BC877

更新时间: 2024-11-17 22:39:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管达林顿晶体管
页数 文件大小 规格书
4页 177K
描述
NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage

BC877 数据手册

 浏览型号BC877的Datasheet PDF文件第2页浏览型号BC877的Datasheet PDF文件第3页浏览型号BC877的Datasheet PDF文件第4页 
NPN Silicon Darlington Transistors  
BC 875  
… BC 879  
High current gain  
Low collector-emitter saturation voltage  
Complementary types: BC 876, BC 878  
BC 880 (PNP)  
Package1)  
Type  
Marking  
Ordering Code  
Pin Configuration  
1
2
3
BC 875  
BC 877  
BC 879  
C62702-C853  
C62702-C854  
C62702-C855  
E
C
B
TO-92  
Maximum Ratings  
Parameter  
Symbol Values  
Unit  
BC 875  
BC 877  
60  
BC 879  
80  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CE0  
CB0  
EB0  
45  
V
60  
80  
100  
5
I
I
I
I
C
1
A
Peak collector current  
Base current  
CM  
2
B
100  
200  
0.8 (1)  
150  
mA  
Peak base current  
BM  
Total power dissipation, T  
C
= 90 ˚C2)  
P
tot  
W
Junction temperature  
Tj  
˚C  
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
R
th JA  
th JC  
156  
75  
K/W  
Junction - case3)  
1)  
For detailed information see chapter Package Outlines.  
2)  
If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for  
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.  
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.  
3)  
5.91  
Semiconductor Group  
1

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