Datasheet > BC868-16-CCC

BC868-16-CCC

更新时间： 2024-10-13 23:14:03

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SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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BC868-16-CCC 数据手册

SOT89 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

BC868

ISSUE 4 - OCTOBER 1995

✪

FEATURES

SUITABLE FOR GENERAL AF APPLICATIONS AND

CLASS B AUDIO OUTPUT STAGES UPTO 3W

HIGH h_FEAND LOW SATURATION VOLTAGE

COMPLEMENTARY TYPE -

PARTMARKING DETAILS–

BC869

BC868

- CAC

BC868-16 - CCC

BC868-25 - CDC

SOT89

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Em itter Voltage

Em itter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_{am b}=25°C

Operating and Storage Tem perature Range

ELECTRICAL CHARACTERISTICS (at T

I_C

P_tot

°C

T_j:T_stg

-65 to +150

= 25°C unless otherw ise stated).

am b

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=100µA

Collector-Em itter

Breakdown Voltage

I_C=10m A*

I_E=10µA

Em itter-Base

Breakdown Voltage

Collector Cut-Off

Current

V_CB= 25V

µA

m A

V_CB= 25V,T_{am b}=150 C

Em itter Cut-Off Current

I_EBO

V_EB=5V

µA

Collector-Em itter

Saturation Voltage

V_CE(sat)

0.5

I_C=1A, I_B=100m A*

Base-Em itter Turn-On

Voltage

V_BE(on)

h_FE

1.0

I_C=1A, V_CE=1V*

Static Forward Current

Transfer Ratio

I_C=5m A, V_CE=10V*

I_C=500m A, V_CE=1V*

I_C=1A, V_CE=1V*

375

BC868-16 100

BC868-25 160

250

375

I_C=500m A, V_CE=1V*

Transition Frequency

Output Capacitance

f_T

MHz

I_C=10m A, V_CE=5V

f = 35MHz

C_obo

V_CB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

For typical characteristics graphs see FMMT449 datasheet.

3 - 11

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