Datasheet > BC868(SOT-89-3L)

BC868(SOT-89-3L)

更新时间： 2024-10-14 14:47:59

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BC868(SOT-89-3L) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

BC868 TRANSISTOR (NPN)

FEATURES

High current

Low voltage

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T^a=25 unless otherwise noted)

℃

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

P_C

500

150

-55~150

℃

T_J

T_stg

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=100μA,I_C=0

I_CBO

I_EBO

V_CB=25V,I_E=0

0.1

μA

Emitter cut-off current

V_EB=5V,I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE1

V_BE2

f_T

V_CE=1V,I_C=500mA

V_CE=1V,I_C=1A

375

DC current gain

V_CE=10V,I_C=5mA

I_C=1A,I_B=100mA

V_CE=10V,I_C=5mA

V_CE=1V,I_C=1A

Collector-emitter saturation voltage

Base-emitter voltage

0.5

0.62

Transition frequency

V_CE=5V,I_C=10mA,f=100MHz

MHz

CLASSIFICATION OF h_FE(1)

Rank

BC868-10

85-160

CBC

BC868-16

100-250

CCC

BC868-25

Range

Marking

160-375

CDC

A,Jun,2011

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