BC858UC

更新时间： 2024-02-24 00:45:12

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
4页	271K
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数据手册

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BC858UC 数据手册

BC858

PNP Silicon Transistor

Descriptions

PIN Connection

• General purpose application

• Switching application

Features

• High voltage : V_CEO=-30V

• Complementary pair with BC848

SOT-23

Ordering Information

Type NO.

Marking

Package Code

VA □ □

BC858

SOT-23

① ②

③

① Device Code ② hFE Rank ③ Year&Week Code

Absolute maximum ratings

Characteristic

(Ta=25°C)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

-30

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

-30

-5

-100

200

°C

Collector dissipation

Junction temperature

Storage temperature

P_C

T_j

150

T_stg

-55~150

°C

Electrical Characteristics

(Ta=25°C)

Characteristic

Collector-Emitter breakdown voltage

Base-Emitter turn on voltage

Base-Emitter saturation voltage

Collector-Emitter saturation voltage

Collector cut-off current

Symbol

Test Condition

Min. Typ. Max. Unit

BV_CEO

V_BE(ON)

V_BE(sat)

V_CE(sat)

I_CBO

I_C=-1mA, I_B=0

-30

-700

V_CE=-5V, I_C=-2mA

I_C=-100mA, I_B=-5mA

V_CB=-35V, I_E= 0

-900

-650

-15

800

110

DC current gain

V_CE=-5V, I_C=-2mA

V_CB=-5V, I_C=-10mA

V_CB=-10V, I_E=0, f=1MHz

h_FE

Transition frequency

f_T

150

MHz

Collector output capacitance

C_ob

4.5

V_CE=-5V, I_C=-200μA,

f=1KHz,Rg=2KΩ, Δf=200Hz

Noise Figure

* : h_FErank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800

KSD-T5C032-000

12 3 4

中文翻译

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