Datasheet > BC858LT1

BC858LT1

更新时间： 2024-05-23 22:22:43

品牌	Logo	应用领域
浩畅 - HC		/
页数	文件大小	规格书
3页	682K
描述
SOT-23

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中文翻译

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数据手册

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BC858LT1 数据手册

SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD.

SOT-23 Plastic-Encapsulate Transistors

BC856A,B

TRANSISTOR (PNP)

BC857A, B,C

BC858A, B,C

SOT-23

FEATURES

Ideally suited for automatic insertion

For Switching and AF Amplifier Applications

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

1. BASE

Symbol Para

meter

Value

Units

2. EMITTER

3. COLLECTOR

V_CBO

Collector-Base Voltage

-80

-50

-30

BC856

BC857

BC858

V_CEO

Collector-Emitter Voltage

-65

-45

BC856

BC857

BC858

-30

V_EBO

I_C

Emitter-Base Voltage

-5

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

-0.1

200

P_C

T_J

150

℃

T_stg

Storage Temperature

-65-150

℃

DEVICE MARKING

BC856 A=3A; BC856B=3B;

BC857A=3E;BC857B=3F;BC857C=3G;

BC858A=3J; BC858B=3K; BC858C=3L

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Max

Unit

Min

-80

-50

-30

-65

-45

-30

Collector-base breakdown voltage

BC856

BC857

BC858

BC856

BC857

BC858

V_CBO

I_C= -10μA, I_E=0

Collector-emitter breakdown voltage

V_CEO

V_EBO

I_CBO

I_EBO

h_FE

I_C= -10mA, I_B=0

Emitter-base breakdown voltage

Collector cut-off current

-5

I_E= -1μA, I_C=0

BC856

BC857

BC858

_CB= -70 V , I_E=0

V_CB= -45 V , I_E=0

_CB= -25 V , I_E=0

-0.1

μA

Emitter cut-off current

V_EB= -5 V , I_C=0

DC current gain

BC856A, 857A,858A

BC856B, 857B,858B

BC857C,BC858C

125

220

420

250

475

800

V_CE= -5V,I_C= -2mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

I_C=-100mA,I_B= -5 mA

-0.5

-1.1

I_C= -100mA, I_B= -5mA

V_CE= -5 V, I_C= -10mA

f=100MHz

Transition frequency

Collector capacitance

100

MHz

f_T

C_ob

V_CB=-10V, f=1MHz

4.5

浩畅半导体

RevK：M ay2014

www.szhaochang.cn

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