Datasheet > BC858BDW1T1

BC858BDW1T1

更新时间： 2024-10-01 04:34:27

品牌	Logo	应用领域
ETL		晶体晶体管
页数	文件大小	规格书
5页	469K
描述
Dual General Purpose Transistors

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中文翻译

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数据手册

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BC858BDW1T1 数据手册

Dual General Purpose Transistors

PNP Duals

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–363/SC–88 which is

designed for low power surface mount applications.

BC856BDW1T1

BC857BDW1T1

BC857CDW1T1

BC858BDW1T1

BC858CDW1T1

Q₂

See Table

Q₁

SOT–363/SC–88

CASE 419B STYLE 1

MAXIMUM RATINGS

Rating

Symbol BC856

BC857 BC858

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

V _CEO

V _CBO

V _EBO

I _C

–65

–80

–45

–50

–30

–5.0

–100

–5.0

–100

–5.0

–100

Collector Current

-Continuous

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Per Device

P _D

380

250

FR– 5 Board, (1) T_A= 25°C

Derate above 25°C

3.0

328

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

1. FR–5 = 1.0 x 0.75 x 0.062 in.

R _θJA

T _J, T _stg

–55 to +150

ORDERING INFORMATION

Device

Package

Shipping

BC856BDW1T1

BC857BDW1T1

BC857CDW1T1

BC858BDW1T1

BC858CDW1T1

SOT–363

3000 Units/Reel

BC856b–1/5

12 3 4 5

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