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BC858B PDF预览

BC858B

更新时间: 2024-02-21 19:22:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
5页 47K
描述
SMALL SIGNAL PNP TRANSISTORS

BC858B 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.59Is Samacsys:N
最大集电极电流 (IC):0.1 A配置:Single
最小直流电流增益 (hFE):125JESD-609代码:e3
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC858B 数据手册

 浏览型号BC858B的Datasheet PDF文件第2页浏览型号BC858B的Datasheet PDF文件第3页浏览型号BC858B的Datasheet PDF文件第4页浏览型号BC858B的Datasheet PDF文件第5页 
BC857  
BC858  
SMALL SIGNAL PNP TRANSISTORS  
Type  
Marking  
BC857A  
BC857B  
BC858A  
BC858B  
3E  
3F  
3J  
3K  
2
SILICON EPITAXIALPLANAR PNP  
TRANSISTORS  
MINIATURE PLASTIC PACKAGE FOR  
APPLICATION IN SURFACE MOUNTING  
CIRCUITS  
3
1
SOT-23  
VERY LOW NOISE AF AMPLIFIER  
NPN COMPLEMENTS FOR BC857 IS BC847  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
BC857  
-50  
BC858  
-30  
VCES  
VCBO  
VCEO  
VEBO  
IC  
Collector-Emitter Voltage (VBE = 0)  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
V
V
-50  
-30  
-45  
-30  
V
-5  
-0.1  
V
A
ICM  
Collector Peak Current  
-0.2  
A
IBM  
Base Peak Current  
-0.2  
A
IEM  
Emitter Peak Current  
Total Dissipation at Tc = 25 oC  
-0.2  
A
Ptot  
Tstg  
Tj  
300  
mW  
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/5  
October 1997  

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