Datasheet > BC858B

BC858B

更新时间： 2024-10-02 18:05:03

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	436K
描述
SOT-23

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数据手册

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BC858B 数据手册

BC858

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to BC848

 Ideally suited for automatic insertion

 For switching and AF amplifier applications

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

-30

Collector-Emitter Voltage

Emitter-Base Voltage

-5

Collector Current

Collector Power Dissipation

-100

200

°C/W

°C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

625

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I =-10uA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-30

-5

，

V(BR)CEO

V(BR)EBO

I_CBO

I =-10mA I =0

，

I_E=-1uA，I_C=0

-0.1

800

-0.5

-1.1

V_CB=-30V, I_E=0

Emitter cut-off current

V_EB=-5V, I_C=0

I_EBO

V_CE=-5V, I_C=-2mA

I_C=-100mA，I_B=-5mA

V_CE=-5V,I_C=-10mA,f=100

DC current gain

h_FE1

110

100

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

MHz

V_CE=-10V, I_E=0, f=1

MHz

Collector output capacitance

C_ob

4.5

CLASSIFICATION OF h_FE

Rank

BC858A

125-250

BC858B

220-475

BC858C

420-800

Range

Marking

1 / 4

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