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BC858AWT1

更新时间: 2024-02-25 22:17:41
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管
页数 文件大小 规格书
8页 254K
描述
CASE 419-02, STYLE 3 SOT-323/SC-70

BC858AWT1 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:2 weeks
风险等级:0.59最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):125JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC858AWT1 数据手册

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Order this document  
by BC856AWT1/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
3
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT–323/SC–70 which is  
designed for low power surface mount applications.  
1
Motorola Preferred Devices  
BASE  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol BC856 BC857 BC858  
Unit  
V
3
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Collector Current — Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
V
V
V
–65  
–80  
–45  
–50  
–30  
–30  
CEO  
CBO  
EBO  
1
V
2
–5.0  
–100  
–5.0  
–100  
–5.0  
–100  
V
CASE 419–02, STYLE 3  
SOT–323/SC–70  
I
C
mAdc  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board, (1)  
= 25°C  
P
D
150  
mW  
T
A
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
833  
°C/W  
°C  
JA  
T , T  
J stg  
55 to +150  
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;  
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = –10 mA)  
C
BC856 Series  
BC857 Series  
BC858 Series  
V
–65  
–45  
–30  
V
(BR)CEO  
CollectorEmitter Breakdown Voltage  
BC856 Series  
BC857 Series  
BC858 Series  
V
–80  
–50  
–30  
V
V
V
(BR)CES  
(BR)CBO  
(BR)EBO  
(I = –10 µA, V  
C EB  
= 0)  
CollectorBase Breakdown Voltage  
(I = –10 A)  
C
BC856 Series  
BC857 Series  
BC858 Series  
V
V
–80  
–50  
–30  
EmitterBase Breakdown Voltage  
(I = –1.0 A)  
E
BC856 Series  
BC857 Series  
BC858 Series  
–5.0  
–5.0  
–5.0  
Collector Cutoff Current (V  
Collector Cutoff Current (V  
= –30 V)  
= –30 V, T = 150°C)  
I
–15  
–4.0  
nA  
µA  
CB  
CB  
CBO  
A
1. FR–5 = 1.0 x 0.75 x 0.062 in  
Thermal Clad is a registered trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996  

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