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BC858A

更新时间: 2024-11-01 08:49:59
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管
页数 文件大小 规格书
5页 1312K
描述
TRANSISTOR (PNP)

BC858A 数据手册

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BC856A,B  
BC857A, B,C  
BC858A, B,C  
TRANSISTOR (PNP)  
FEATURES  
y
y
Ideally suited for automatic insertion  
For Switching and AF Amplifier Applications  
SOT-23  
1. BASE  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
2. EMITTER  
3. COLLECTOR  
Symbol  
VCBO  
Parameter  
Value  
Units  
Collector-Base Voltage  
-80  
-50  
-30  
BC856  
BC857  
BC858  
V
VCEO  
Collector-Emitter Voltage  
-65  
-45  
BC856  
BC857  
BC858  
V
-30  
VEBO  
IC  
Emitter-Base Voltage  
-5  
V
A
Collector Current –Continuous  
Collector Power Dissipation  
Junction Temperature  
-0.1  
200  
PC  
mW  
TJ  
150  
Tstg  
Storage Temperature  
-65-150  
DEVICE MARKING  
BC856A=3A; BC856B=3B;  
BC857A=3E;BC857B=3F;BC857C=3G;  
BC858A=3J; BC858B=3K; BC858C=3L  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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