是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
风险等级: | 5.55 | 其他特性: | HIGH RELIABILITY |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 125 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC858-A | SAMSUNG |
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Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, | |
BC858A(KC858A) | KEXIN |
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PNP Transistor | |
BC858A/E8 | ETC |
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TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SOT-23 | |
BC858A/E9 | ETC |
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TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SOT-23 | |
BC858A-3J | ETC |
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SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS | |
BC858A-7 | DIODES |
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PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR | |
BC858A-7-F | DIODES |
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PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 | |
BC858-A-AE3-6-R | UTC |
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Transistor | |
BC858-A-AE3-R | UTC |
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SWITCHING AND AMPLIFIER APPLICATIONS | |
BC858-A-AL3-R | UTC |
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Small Signal Bipolar Transistor |