Datasheet > BC858

BC858

更新时间： 2024-11-02 14:53:23

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
4页	2038K
描述
双极型晶体管

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技术参数
数据手册

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BC858 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	30
Collector Current - Continuous：	0.1	DC current gain - Min：	125
DC current gain - Max：	800	Transition frequency：	100
Package：	SOT-23	Storage Temperature Range：	-55-150
class：	Transistors

BC858 数据手册

BC856/857/858

PNP general purpose Transistor

SOT-23

Min

FEATURES

Dim

Max

3.10

1.50

Low current.(max.100mA).

2.70

1.10

Low voltage..

1.0 Typical

0.4 Typical

APPLICATIONS

0.35

0.48

2.00

0.1

General purpose switching and amplification.

1.80

0.02

0.1 Typical

ORDERING INFORMATION

2.20

2.60

Type No.

Marking

Package Code

All Dimensions in mm

BC856A/B

BC857A/B/C

BC858A/B/C

3A/3B

3E/3F/3G

3J/3K/3L

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

BC856 -80

BC857 -50

BC858 -30

BC856 -65

BC857 -45

BC858 -30

V_CBO

Collector-Emitter Voltage

V_CEO

V_EBO

I_C

Emitter-Base Voltage

-5

Collector Current -Continuous

-0.1

P_C

Collector Dissipation

250

T_j,T_stg

Junction and Storage Temperature

-65 to +150

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage BC856

-80

BC857 V_(BR)CBOI_C=-10μA,I_E=0

-50

-30

-65

-45

-30

BC858

Collector-emitter breakdown voltage BC856

BC857 V_(BR)CEOI_C=-10mA,I_B=0

BC858

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)EBOI_E=-1μA,I_C=0

-5

I_CBO

I_EBO

V_CB=-30V,I_E=0

V_EB=-5V,I_C=0

-1

-15

Emitter cut-off current

-0.1

μA

DC current gain

BC856A,857A,858A

125

220

420

250

475

800

BC856B,857B,858B h_FE

BC857C,858C

V_CE=-5V,I_C=-2mA

I_C=-100mA, I_B=-5mA

I_C=-10mA, I_B=-0.5mA

-0.65

-0.3

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE(sat)

V_BE(on)

C_c

I_C=-10mA, I_B=-0.5mA

I_C=-100mA, I_B=-5mA

-0.7

-0.85

I_C=-2mA,V_CE=-5V

I_C=-10mA,V_CE=-5V

-0.6 -0.65 -0.75

-0.82

V_CB=-10V,I_E=I_e=0

f=1MHz

collector capacitance

4.5

I_C=-200uA,V_CE=-5V,

R_S=2kΩ,f=1kHz,

B=200Hz

Transition frequency

V_CE=-5V, I_C= -10mA

f=100MHz

f_T

100

MHz

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Revision:20170701-P1

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