BC857U

更新时间： 2024-10-01 08:49:59

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
4页	270K
描述
General purpose application

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中文翻译

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数据手册

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BC857U 数据手册

BC857U

PNP Silicon Transistor

Descriptions

PIN Connection

• General purpose application

• Switching application

Features

• High voltage : V_CEO=-45V

• Complementary pair with BC847U

SOT-323

Ordering Information

Type NO.

Marking

Package Code

BV □ □

① ② ③

BC857U

SOT-323

①Device Code ②hFE Rank ③Year&Week Code

Absolute maximum ratings

(Ta=25°C)

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

-50

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

-45

-5

-100

200

°C

Collector dissipation

Junction temperature

Storage temperature

P_C

T_j

150

T_stg

-55~150

°C

Electrical Characteristics

(Ta=25°C)

Characteristic

Symbol

BV_CEO

Test Condition

Min. Typ. Max. Unit

Collector-Emitter breakdown voltage

Base -Emitter turn on voltage

Base -Emitter saturation voltage

Collector-Emitter saturation voltage

Collector cut-off current

DC current gain

I_C=-2mA, I_B=0

-45

-700

V_BE(ON)

V_BE(sat)

V_CE(sat)

I_CBO

V_CE=-5V, I_C=-2mA

I_C=-100mA, I_B=-5mA

V_CB=-35V, I_E= 0

-900

-650

-15

800

V_CE=-5V, I_C=-2mA

V_CB=-5V, I_C=-10mA

V_CB=-10V, I_E=0, f=1MHz

110

150

h_FE

Transition frequency

f_T

MHz

Collector output capacitance

Noise Figure

C_ob

4.5

V_CE=-5V, I_C=-200μA,

f=1KHz,Rg=2KΩ

* : h_FErank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800

KSD-T5D037-000

12 3 4

中文翻译

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