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BC857C PDF预览

BC857C

更新时间: 2024-01-19 13:18:42
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器晶体管光电二极管IOT
页数 文件大小 规格书
5页 43K
描述
PNP General Purpose Amplifier

BC857C 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.55Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):125
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC857C 数据手册

 浏览型号BC857C的Datasheet PDF文件第2页浏览型号BC857C的Datasheet PDF文件第3页浏览型号BC857C的Datasheet PDF文件第4页浏览型号BC857C的Datasheet PDF文件第5页 
BC857A  
BC857B  
BC857C  
C
E
B
SOT-23  
Mark: 3E / 3F / 3G  
PNP General Purpose Amplifier  
This device is designed for general purpose amplifier applications  
at collector currents to 300 mA. Sourced from Process 68.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
45  
50  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
500  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
*BC857A / B / C  
PD  
Total Device Dissipation  
Derate above 25 C  
350  
2.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Ambient  
357  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.  
ã 1997 Fairchild Semiconductor Corporation  

BC857C 替代型号

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