5秒后页面跳转
BC857C-3G PDF预览

BC857C-3G

更新时间: 2024-02-14 13:00:34
品牌 Logo 应用领域
其他 - ETC 晶体晶体管局域网
页数 文件大小 规格书
3页 39K
描述
SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS

BC857C-3G 数据手册

 浏览型号BC857C-3G的Datasheet PDF文件第2页浏览型号BC857C-3G的Datasheet PDF文件第3页 
SOT23 PNP SILICON PLANAR  
BC856  
BC858  
BC860  
BC857  
BC859  
GENERAL PURPOSE TRANSISTORS  
ISSUE 6 - APRIL 1997  
PARTMARKING DETAILS  
BC856A–3A BC858C–3L  
BC856B–Z3B BC859A–Z4A BC857  
BC857A–Z3E BC859B–4B BC858  
COMPLEMENTARY TYPES  
E
BC856  
BC846  
BC847  
BC848  
BC849  
BC850  
C
B
BC857B–3F  
BC857C–3G  
BC858A–3J  
BC858B–3K  
BC859C–Z4C BC859  
BC860A–Z4E BC860  
BC860B–4F  
SOT23  
BC860C–4GZ  
ABSOLUTE MAXIMUM RATINGS.  
UNIT  
V
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Pulse Current  
SYMBOL  
BC856  
-80  
BC857  
-50  
BC858  
-30  
BC859  
-30  
BC860  
-50  
VCBO  
VCES  
VCEO  
VEBO  
IC  
-80  
-50  
-30  
-30  
-50  
V
-65  
-45  
-30  
-30  
-45  
V
-5  
V
-100  
-200  
-200  
-200  
330  
mA  
mA  
mA  
mA  
mW  
°C  
IEM  
Base Current  
IBM  
Base Current  
IEM  
Power Dissipation at Tamb=25°C  
Ptot  
Operating and Storage  
Temperature Range  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
UNIT CONDITIONS.  
BC856 BC857 BC858 BC859 BC860  
PARAMETER  
SYMBOL  
Collector Cut-Off Current ICBO  
Max  
Max  
nA  
VCB = -30V  
CB = -30V  
Tamb=150°C  
-15  
-4  
V
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat) Typ  
-75 -75  
-75  
Max. -300 -300 -300 -250 -250  
-75 -75  
mV IC=-10mA,  
IB=-0.5mA  
Typ  
Max.  
-250  
-650  
mV IC=-100mA,  
IB=-5mA  
Typ  
Max.  
-300  
-600  
mV IC=-10mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
-700  
mV IC=-10mA,  
IB=-0.5mA  
Typ  
-850  
mV IC=-100mA,  
IB=-5mA  
Typ  
Base-Emitter Voltage  
VBE  
-600 -600 -600 -580 -580 mV IC=-2mA  
Min  
Typ  
Max  
-650 -650 -650 -650 -650  
-750 -750 -750 -750 -750  
VCE=-5V  
-820  
mV IC=-10mA  
VCE=-5V  
Max  
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the  
operating point IC = 11mA, VCE = 1V at constant base current.  

与BC857C-3G相关器件

型号 品牌 获取价格 描述 数据表
BC857C-7 DIODES

获取价格

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BC857C-7-F DIODES

获取价格

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23
BC857-C-AE3-6-R UTC

获取价格

Transistor
BC857-C-AE3-R UTC

获取价格

SWITCHING AND AMPLIFIER APPLICATIONS
BC857-C-AL3-R UTC

获取价格

Small Signal Bipolar Transistor
BC857C-AU PANJIT

获取价格

SOT-23
BC857CD87Z TI

获取价格

500mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
BC857CDW YEASHIN

获取价格

Dual General Purpose Transistors
BC857CDW1T1 ONSEMI

获取价格

Dual General Purpose Transistors
BC857CDW1T1 LRC

获取价格

Dual General Purpose Transistors(PNP Duals)