5秒后页面跳转
BC857BWT1 PDF预览

BC857BWT1

更新时间: 2024-11-22 22:22:35
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
5页 215K
描述
General Purpose Transistors(PNP Silicon)

BC857BWT1 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.26最大集电极电流 (IC):0.1 A
配置:Single最小直流电流增益 (hFE):220
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
子类别:Other Transistors表面贴装:YES
处于峰值回流温度下的最长时间:NOT SPECIFIED标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC857BWT1 数据手册

 浏览型号BC857BWT1的Datasheet PDF文件第2页浏览型号BC857BWT1的Datasheet PDF文件第3页浏览型号BC857BWT1的Datasheet PDF文件第4页浏览型号BC857BWT1的Datasheet PDF文件第5页 
LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
PNP Silicon  
BC856AWT1, BWT1  
BC857AWT1, BWT1  
BC858AWT1, BWT1  
These transistors are designed for general purpose  
amplifier applications. They are housed in the SOT–323/  
SC–70 which is designed for low power surface mount  
3
COLLECTOR  
applications.  
1
CWT1  
BASE  
2
EMITTER  
3
MAXIMUM RATINGS  
1
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
BC856  
–65  
BC857  
BC858  
–30  
Unit  
2
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
–45  
–50  
V
CASE 419–02, STYLE 3  
–80  
–30  
V
V
SOT– 323 / SC-70  
–5.0  
–100  
–5.0  
–100  
–5.0  
–100  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
P D  
150  
mW  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R θJA  
833  
°C/W  
°C  
T J , T stg  
–55 to +150  
DEVICE MARKING  
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;  
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(IC = –10 mA)  
BC856 Series  
BC857 Series  
BC858 Series  
BC856 Series  
BC857 Series  
BC858 Series  
– 65  
– 45  
– 30  
– 80  
– 50  
– 30  
– 80  
– 50  
– 30  
– 5.0  
– 5.0  
– 5.0  
V (BR)CEO  
V (BR)CES  
V (BR)CBO  
v
v
v
v
Collector–Emitter Breakdown Voltage  
(IC = –10 µA, VEB = 0)  
Collector–Base Breakdown Voltage BC856 Series  
(IC = – 10 µA)  
BC857 Series  
BC858 Series  
BC856 Series  
BC857 Series,  
BC858 Series  
Emitter–Base Breakdown Voltage  
(IE = – 1.0 µA)  
V (BR)EBO  
Collector Cutoff Current (VCB = – 30 V)  
(VCB = – 30 V, TA = 150°C)  
– 15  
– 4.0  
nA  
I CBO  
µA  
1.FR–5=1.0 x 0.75 x 0.062in  
K5–1/5  

与BC857BWT1相关器件

型号 品牌 获取价格 描述 数据表
BC857BWT1G ONSEMI

获取价格

PNP Bipolar Transistor, SC-70 (SOT-323) 3 LEAD, 3000-REEL
BC857BWT3 MOTOROLA

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
BC857BW-TAPE-7 NXP

获取价格

TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC857C TRSYS

获取价格

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BC857C DIOTEC

获取价格

Surface mount Si-Epitaxial PlanarTransistors
BC857C FAIRCHILD

获取价格

PNP General Purpose Amplifier
BC857C MCC

获取价格

PNP Small Signal Transistor 310mW
BC857C TSC

获取价格

0.2 Watts PNP Plastic-Encapsulate Transistors
BC857C HTSEMI

获取价格

TRANSISTOR (PNP)
BC857C RECTRON

获取价格

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)