5秒后页面跳转
BC857BWT1 PDF预览

BC857BWT1

更新时间: 2024-01-10 18:26:33
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管
页数 文件大小 规格书
8页 254K
描述
CASE 419-02, STYLE 3 SOT-323/SC-70

BC857BWT1 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.64最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):220JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC857BWT1 数据手册

 浏览型号BC857BWT1的Datasheet PDF文件第2页浏览型号BC857BWT1的Datasheet PDF文件第3页浏览型号BC857BWT1的Datasheet PDF文件第4页浏览型号BC857BWT1的Datasheet PDF文件第5页浏览型号BC857BWT1的Datasheet PDF文件第6页浏览型号BC857BWT1的Datasheet PDF文件第7页 
Order this document  
by BC856AWT1/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
3
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT–323/SC–70 which is  
designed for low power surface mount applications.  
1
Motorola Preferred Devices  
BASE  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol BC856 BC857 BC858  
Unit  
V
3
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Collector Current — Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
V
V
V
–65  
–80  
–45  
–50  
–30  
–30  
CEO  
CBO  
EBO  
1
V
2
–5.0  
–100  
–5.0  
–100  
–5.0  
–100  
V
CASE 419–02, STYLE 3  
SOT–323/SC–70  
I
C
mAdc  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board, (1)  
= 25°C  
P
D
150  
mW  
T
A
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
833  
°C/W  
°C  
JA  
T , T  
J stg  
55 to +150  
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;  
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = –10 mA)  
C
BC856 Series  
BC857 Series  
BC858 Series  
V
–65  
–45  
–30  
V
(BR)CEO  
CollectorEmitter Breakdown Voltage  
BC856 Series  
BC857 Series  
BC858 Series  
V
–80  
–50  
–30  
V
V
V
(BR)CES  
(BR)CBO  
(BR)EBO  
(I = –10 µA, V  
C EB  
= 0)  
CollectorBase Breakdown Voltage  
(I = –10 A)  
C
BC856 Series  
BC857 Series  
BC858 Series  
V
V
–80  
–50  
–30  
EmitterBase Breakdown Voltage  
(I = –1.0 A)  
E
BC856 Series  
BC857 Series  
BC858 Series  
–5.0  
–5.0  
–5.0  
Collector Cutoff Current (V  
Collector Cutoff Current (V  
= –30 V)  
= –30 V, T = 150°C)  
I
–15  
–4.0  
nA  
µA  
CB  
CB  
CBO  
A
1. FR–5 = 1.0 x 0.75 x 0.062 in  
Thermal Clad is a registered trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996  

与BC857BWT1相关器件

型号 品牌 获取价格 描述 数据表
BC857BWT1G ONSEMI

获取价格

PNP Bipolar Transistor, SC-70 (SOT-323) 3 LEAD, 3000-REEL
BC857BWT3 MOTOROLA

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
BC857BW-TAPE-7 NXP

获取价格

TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC857C TRSYS

获取价格

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BC857C DIOTEC

获取价格

Surface mount Si-Epitaxial PlanarTransistors
BC857C FAIRCHILD

获取价格

PNP General Purpose Amplifier
BC857C MCC

获取价格

PNP Small Signal Transistor 310mW
BC857C TSC

获取价格

0.2 Watts PNP Plastic-Encapsulate Transistors
BC857C HTSEMI

获取价格

TRANSISTOR (PNP)
BC857C RECTRON

获取价格

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)