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BC857BWG PDF预览

BC857BWG

更新时间: 2024-11-10 02:52:55
品牌 Logo 应用领域
鲁光 - LGE /
页数 文件大小 规格书
5页 1066K
描述
PNP Silicon Epitaxial Planar Transistor

BC857BWG 数据手册

 浏览型号BC857BWG的Datasheet PDF文件第2页浏览型号BC857BWG的Datasheet PDF文件第3页浏览型号BC857BWG的Datasheet PDF文件第4页浏览型号BC857BWG的Datasheet PDF文件第5页 
PNP Silicon Epitaxial Planar Transistor  
BC856W/BC857W/BC858W  
FEATURES  
Pb  
Lead-free  
For AF input stages and driver applications.  
High current gain.  
Low collector-emitter saturation voltage.  
Low noise between 30Hz and 15 kHz.  
Complementary types:BC846W,BC847W,BC848W.  
APPLICATIONS  
General purpose switching and amplification application.  
SOT-323  
ORDERING INFORMATION  
Type No.  
Marking  
Package Code  
BC856AW/BC856BW□  
BC857AW/BC857BW/BC857CW□  
BC858AW/BC858BW/BC858CW□  
3A/3B  
3E/3F/3G  
3J/3K/3L  
SOT-323  
SOT-323  
SOT-323  
: none is for Lead Free package;  
“G” is for Halogen Free package.  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
Collector-Base Voltage  
BC856W  
BC857W  
BC858W  
BC856W  
BC857W  
BC858W  
-80  
-50  
-30  
-65  
-45  
-30  
VCBO  
V
Collector-Emitter Voltage  
VCEO  
V
VEBO  
IC  
Emitter-Base Voltage  
Collector Current -Continuous  
Peak Collector current  
Peak Base current  
-5  
-100  
V
mA  
mA  
mA  
mW  
ICM  
-200  
IBM  
-200  
PC  
Collector Dissipation  
200  
Tj,Tstg  
Junction and Storage Temperature  
-65 to +150  
.
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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