Datasheet > BC857BV

BC857BV

更新时间： 2024-10-02 11:15:07

品牌	Logo	应用领域
安世 - NEXPERIA		光电二极管晶体管
页数	文件大小	规格书
8页	185K
描述
45 V, 100 mA PNP general purpose double transistorProduction

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BC857BV 数据手册

BC857BV

45 V, 100 mA PNP general purpose double transistor

27 December 2022

Product data sheet

1. General description

PNP double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic

package.

NPN complement: BC847BV

2. Features and benefits

•

300 mW total power dissipation

•

Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package

Reduces number of components as replacement of two SC-75/SC-89 packaged BISS

transistors

•

Reduces required board space

Reduces pick and place costs

3. Applications

•

General purpose switching and amplification

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

-45

I_C

collector current

DC current gain

-100

450

h_FE

V_CE= -5 V; I_C= -2 mA; T_amb= 25 °C

200

5. Pinning information

Table 2. Pinning information

Symbol

Description

emitter TR1

base TR1

Simplified outline

Graphic symbol

C1 B2

TR2

collector TR2

emitter TR2

base TR2

TR1

B1 C2

SOT666

collector TR1

sym138

12 3 4 5 6 7 8

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