Datasheet > BC857BTT1/D

BC857BTT1/D

更新时间： 2024-11-28 23:34:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	150K
描述
General Purpose Transistor

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中文翻译

获取价格

数据手册

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BC857BTT1/D 数据手册

Preferred Devices

PNP Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–416/SC–75 which is

designed for low power surface mount applications.

http://onsemi.com

COLLECTOR

• Device Marking:

BC857BTT1 = 3F

BC857CTT1 = 3G

BASE

MAXIMUM RATINGS (T = 25°C)

EMITTER

Rating

Symbol

Max

–45

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

–50

–5.0

–100

Collector Current — Continuous

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

CASE 463

SOT–416/SC–75

STYLE 1

Total Device Dissipation,

(1)

FR–4 Board

= 25°C

200

Derated above 25°C

1.6

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient

600

θJA

(1)

DEVICE MARKING

Total Device Dissipation,

(2)

FR–4 Board

= 25°C

300

Derated above 25°C

2.4

mW/°C

°C/W

See Table

Thermal Resistance,

Junction to Ambient

400

θJA

(2)

Junction and Storage

Temperature Range

T , T

J stg

–55 to

+150

°C

(1) FR–4 @ Minimum Pad

(2) FR–4 @ 1.0 × 1.0 Inch Pad

ORDERING INFORMATION

Device

Package

SOT–416

Shipping

BC857BTT1

BC857CTT1

3000 / Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

May, 2000 – Rev. 1

BC857BTT1/D

12 3 4 5 6 7 8

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