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BC857BLP_1 PDF预览

BC857BLP_1

更新时间： 2024-01-22 13:52:19
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 130K
描述
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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BC857BLP_1 数据手册

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BC857BLP  
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
•
•
•
•
•
•
Epitaxial Die Construction  
Complementary NPN Type Available (BC847BLP)  
Ultra-Small Leadless Surface Mount Package  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
1
3
E
B
C
Mechanical Data  
2
•
•
Case: DFN1006-3  
Case Material: Molded Plastic, "Green" Molding  
Compound. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections Indicator: Collector Dot  
Terminals: Finish ⎯ NiPdAu over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Ordering Information: See Page 3  
Marking Information: See Page 3  
Weight: 0.0009 grams  
TOP VIEW  
(Internal Schematic)  
BOTTOM VIEW  
•
•
•
DFN1006-3  
•
•
•
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-50  
-45  
-5.0  
-100  
Unit  
V
V
V
mA  
Collector Current  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 3) @TA = 25°C  
Symbol  
PD  
Value  
250  
Unit  
mW  
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C  
Operating and Storage Temperature Range  
500  
-55 to +150  
RθJA  
Tj, TSTG  
°C/W  
°C  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
hFE  
Min  
-50  
-45  
-5  
Typ  
—
—
Max  
—
—
Unit Test Condition  
V
V
IC = 10μA, IB = 0  
IC = 10mA, IB = 0  
—
—
V
IE = 1μA, IC = 0  
220  
260  
-90  
-250  
-700  
-850  
-670  
-710  
—
475  
-300  
-650  
—
—
VCE = -5.0V, IC = -2.0mA  
IC = -10mA, IB = -0.5mA  
IC = -100mA, IB = -5.0mA  
IC = -10mA, IB = -0.5mA  
IC = -100mA, IB = -5.0mA  
VCE = -5.0V, IC = -2.0mA  
VCE = -5.0V, IC = -10mA  
VCB = -30V  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Voltage  
VCE(SAT)  
VBE(SAT)  
VBE(ON)  
ICBO  
—
mV  
mV  
mV  
—
—
-600  
—
—
—
—
-750  
-820  
-15  
-4.0  
nA  
µA  
Collector-Cutoff Current  
—
VCB = -30V, TA = 150°C  
VCE = -5.0V, IC = -10mA,  
f = 100MHz  
Gain Bandwidth Product  
fT  
100  
—
—
—
—
MHz  
pF  
Collector-Base Capacitance  
CCBO  
3.0  
VCB = -10V, f = 1.0MHz  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php  
3. Device mounted on FR-4 PCB, pad layout as shown on page 3, or Diodes Inc. suggested pad layout document AP02001 on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
4. Short duration pulse test used to minimize self-heating effect.  
DS30526 Rev. 9 - 2  
1 of 3  
BC857BLP  
© Diodes Incorporated  
www.diodes.com  
123

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