Datasheet > BC857AT_2

BC857AT_2

更新时间： 2024-01-10 19:20:48

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
3页	109K
描述
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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中文翻译

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数据手册

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BC857AT_2 数据手册

BC857AT, BT, CT

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Die Construction

Complementary NPN Types Available (BC847AT,BT,CT)

Ultra-Small Surface Mount Package

Lead Free/RoHS Compliant (Note 2)

Qualified to AEC-Q101 Standards for High Reliability

"Green" Device (Note 4 and 5)

SOT-523

Dim Min Max Typ

0.15 0.30 0.22

0.75 0.85 0.80

1.45 1.75 1.60

TOP VIEW

0.50

⎯

Mechanical Data

0.90 1.10 1.00

1.50 1.70 1.60

0.00 0.10 0.05

0.60 0.80 0.75

0.10 0.30 0.22

0.10 0.20 0.12

0.45 0.65 0.50

•

Case: SOT-523

Case Material - Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

Terminal Connections: See Diagram

Marking Code: See Table Below & Diagram on Page 2

Ordering & Date Code Information: See Page 2

Weight: 0.002 grams (approximate)

•

Type

Marking

•

BC857AT

BC857BT

BC857CT

0°

8°

⎯

All Dimensions in mm

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-50

Unit

-45

Collector-Emitter Voltage

-5.0

-100

150

833

Emitter-Base Voltage

Collector Current

Power Dissipation

°C/W

(Note 1)

P_d

Thermal Resistance, Junction to Ambient

R_θ

Operating and Storage Temperature Range

-55 to +150

°C

T_j, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

Min

-50

-45

-5

Typ

—

Max

—

Unit

Test Condition

I_C= 10μA, I_B= 0

I_C= 10mA, I_B= 0

I_E= 1μA, I_C= 0

(Note 3)

—

DC Current Gain

(Note 3) Current Gain

125

220

420

—

290

520

250

475

800

—

h_FE

V_CE= -5.0V, I_C= -2.0mA

I_C= -10mA, I_B= -0.5mA

I_C= -100mA, I_B= -5.0mA

I_C= -10mA, I_B= -0.5mA

I_C= -100mA, I_B= -5.0mA

V_CE= -5.0V, I_C= -2.0mA

V_CE= -5.0V, I_C= -10mA

V_CB= -30V

V_CB= -30V, T_A= 150°C

V_CE= -5.0V, I_C= -10mA, f = 100MHz

V_CB= -10V, f = 1.0MHz

—

-300

-650

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

(Note 3)

—

V_CE(SAT)

V_BE(SAT)

V_BE(ON)

—

-700

-900

—

-600

—

-750

-820

—

-15

-4.0

µA

Collector-Cutoff Current

I_CBO

f_T

C_OB

Gain Bandwidth Product

Output Capacitance

100

—

4.5

MHz

I_C= -0.2mA, V_CE= -5.0Vdc,

R_S= 2.0KΩ, f = 1.0KHz,

BW = 200Hz

Noise Figure

—

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead

3. Short duration pulse test used to minimize self-heating effect.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

BC857AT, BT, CT

DS30275 Rev. 9 - 2

1 of 3

www.diodes.com

12 3

中文翻译

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与BC857AT_2相关器件

型号	品牌	获取价格	描述	数据表
BC857AT116	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon,
BC857AT117	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon,
BC857AT-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA S
BC857AT216	ROHM	获取价格	Small Signal Bipolar Transistor, 0.01A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, MINIMO
BC857AT-7	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
BC857AT-7-F	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
BC857ATA	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
BC857A-TAPE-13	NXP	获取价格	TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC857A-TAPE-7	NXP	获取价格	TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC857ATC	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon

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