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BC857AT_2

更新时间： 2024-11-27 12:50:03
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 109K
描述
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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BC857AT_2 数据手册

 浏览型号BC857AT_2的Datasheet PDF文件第2页浏览型号BC857AT_2的Datasheet PDF文件第3页 
BC857AT, BT, CT  
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
A
•
•
•
•
•
•
Epitaxial Die Construction  
Complementary NPN Types Available (BC847AT,BT,CT)  
Ultra-Small Surface Mount Package  
Lead Free/RoHS Compliant (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
"Green" Device (Note 4 and 5)  
SOT-523  
C
Dim Min Max Typ  
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
C
B
TOP VIEW  
E
B
0.50  
⎯
⎯
G
H
Mechanical Data  
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
•
•
Case: SOT-523  
Case Material - Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy  
42 leadframe).  
Terminal Connections: See Diagram  
Marking Code: See Table Below & Diagram on Page 2  
Ordering & Date Code Information: See Page 2  
Weight: 0.002 grams (approximate)  
K
J
M
N
K
L
•
•
•
L
D
M
N
α
Type  
Marking  
3V  
3W  
•
•
•
•
BC857AT  
BC857BT  
BC857CT  
0°  
8°  
⎯
3G  
All Dimensions in mm  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-50  
Unit  
V
-45  
V
Collector-Emitter Voltage  
-5.0  
-100  
150  
833  
V
Emitter-Base Voltage  
Collector Current  
Power Dissipation  
mA  
mW  
°C/W  
(Note 1)  
(Note 1)  
Pd  
Thermal Resistance, Junction to Ambient  
Rθ  
JA  
Operating and Storage Temperature Range  
-55 to +150  
°C  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
Min  
-50  
-45  
-5  
Typ  
—
—
Max  
—
—
Unit  
Test Condition  
IC = 10μA, IB = 0  
IC = 10mA, IB = 0  
IE = 1μA, IC = 0  
(Note 3)  
(Note 3)  
(Note 3)  
V
V
V
—
—
DC Current Gain  
(Note 3) Current Gain  
A
B
C
125  
220  
420  
—
290  
520  
250  
475  
800  
—
hFE  
VCE = -5.0V, IC = -2.0mA  
IC = -10mA, IB = -0.5mA  
IC = -100mA, IB = -5.0mA  
IC = -10mA, IB = -0.5mA  
IC = -100mA, IB = -5.0mA  
VCE = -5.0V, IC = -2.0mA  
VCE = -5.0V, IC = -10mA  
VCB = -30V  
VCB = -30V, TA = 150°C  
VCE = -5.0V, IC = -10mA, f = 100MHz  
VCB = -10V, f = 1.0MHz  
—
—
-300  
-650  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Voltage  
(Note 3)  
(Note 3)  
(Note 3)  
(Note 3)  
—
mV  
mV  
mV  
VCE(SAT)  
VBE(SAT)  
VBE(ON)  
—
—
-700  
-900  
—
—
-600  
—
—
—
-750  
-820  
—
—
—
—
-15  
-4.0  
NA  
µA  
Collector-Cutoff Current  
ICBO  
fT  
COB  
Gain Bandwidth Product  
Output Capacitance  
100  
—
—
—
—
4.5  
MHz  
pF  
IC = -0.2mA, VCE = -5.0Vdc,  
RS = 2.0KΩ, f = 1.0KHz,  
BW = 200Hz  
Noise Figure  
NF  
—
—
10  
dB  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead  
3. Short duration pulse test used to minimize self-heating effect.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
BC857AT, BT, CT  
© Diodes Incorporated  
DS30275 Rev. 9 - 2  
1 of 3  
www.diodes.com  
123

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