生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.28 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 45 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 125 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.35 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC857ARTRLEADFREE | CENTRAL |
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暂无描述 | |
BC857AS62Z | TI |
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500mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | |
BC857AT | DIODES |
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PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |
BC857AT | NXP |
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PNP general purpose transistors | |
BC857AT | INFINEON |
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PNP Silicon AF Transistor | |
BC857AT | MCC |
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PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |
BC857AT | CENTRAL |
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SURFACE MOUNT PNP SILICON TRANSISTOR | |
BC857AT | YANGJIE |
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SOT-523 | |
BC857AT | BL Galaxy Electrical |
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45V,0.1A,General Purpose PNP Bipolar Transistor | |
BC857AT,115 | NXP |
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BC856T; BC857T series - PNP general purpose transistors SC-75 3-Pin |