Datasheet > BC856BTTRPBFREE

BC856BTTRPBFREE

更新时间： 2025-07-16 19:20:43

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CENTRAL		/
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描述
元器件封装:SOT-523;

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中文翻译

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数据手册

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BC856BTTRPBFREE 数据手册

BC856T SERIES

BC857T SERIES

www.centralsemi.com

SURFACE MOUNT

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BC856T and

BC857T Series types are PNP Silicon Transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for

general purpose switching and amplifier applications.

MARKING CODE: SEE MARKING CODE TABLE

ON FOLLOWING PAGE

SOT-523 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

BC857T

BC856T

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

CBO

CEO

EBO

5.0

100

200

100

250

°C

T , T

-65 to +150

500

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

μA

MHz

=30V

=30V, T =150°C

=5.0V

5.0

100

CBO

EBO

I =10μA (BC857T)

5.0

CBO

CEO

EBO

I =10μA (BC856T)

I =10mA (BC857T)

I =10mA (BC856T)

I =10μA

I =10mA, I =0.5mA

0.20

0.40

0.70

0.77

CE(SAT)

BE(ON)

I =100mA, I =5.0mA

I =2.0mA, V =5.0V

0.58

100

I =10mA, V =5.0V

=5.0V, I =10mA, f=100MHz

=10V, I =0, f=1.0MHz

2.5

=0.5V, I =0, f=1.0MHz

=5.0V, I =200μA,

R =2.0KΩ, f=1.0KHz, BW=200Hz

BC856AT

BC857AT

MIN

125

MAX

250

=5.0V, I =2.0mA

R1 (20-November 2009)

12 3

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