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BC856AW

更新时间: 2024-09-30 22:54:03
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
2页 125K
描述
Surface mount Si-Epitaxial PlanarTransistors

BC856AW 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:1.28Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:65 V
配置:SINGLE最小直流电流增益 (hFE):125
JESD-30 代码:R-PDSO-G3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC856AW 数据手册

 浏览型号BC856AW的Datasheet PDF文件第2页 
BC 856W ... BC 860W  
PNP  
General Purpose Transistors  
Surface mount Si-Epitaxial PlanarTransistors  
PNP  
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage  
Power dissipation – Verlustleistung  
200 mW  
SOT-323  
±0.1  
±0.1  
Plastic case  
2
1
0.3  
Kunststoffgehäuse  
3
Type  
Weight approx. – Gewicht ca.  
0.01 g  
Code  
1
2
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1.3  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions / Maße in mm  
1 = B 2 = E 3 = C  
Maximum ratings (TA = 25C)  
Grenzwerte (TA = 25C)  
BC 856W  
BC 857W  
BC 858W  
BC 860W  
BC 859W  
Collector-Emitter-voltage  
Collector-Base-voltage  
Emitter-Base-voltage  
Power dissipation – Verlustleistung  
Collector current – Kollektorstrom (DC)  
B open  
E open  
C open  
- VCE0  
- VCB0  
- VEB0  
Ptot  
65 V  
80 V  
45 V  
50 V  
5 V  
30 V  
30 V  
200 mW 1)  
100 mA  
200 mA  
200 mA  
200 mA  
- IC  
Peak Collector current – Kollektor-Spitzenstrom - ICM  
Peak Base current – Basis-Spitzenstrom  
Peak Emitter current – Emitter-Spitzenstrom  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
- IBM  
IEM  
Tj  
150  
C  
TS  
- 65…+ 150 C  
Characteristics (Tj = 25C)  
Kennwerte (Tj = 25C)  
Group A  
Group B  
Group C  
DC current gain – Kollektor-Basis-Stromverhältnis 2)  
- VCE = 5 V, - IC = 10  
- VCE = 5 V, - IC = 2 mA  
A
hFE  
hFE  
typ. 90  
110...220  
typ. 150  
200...450  
typ. 270  
420...800  
h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz  
Small signal current gain – Stromverstärkung hfe  
typ. 220  
typ. 330  
typ. 600  
Input impedance – Eingangs-Impedanz  
Output admittance – Ausgangs-Leitwert  
hie  
hoe  
1.6...4.5 k  
3.2...8.5 k  
6...15 k  
60 < 110  
18 < 30  
S
30 < 60  
S
S
Reverse voltage transfer ratio  
Spannungsrückwirkung  
hre  
typ.1.5 *10-4  
typ. 2 *10-4  
typ. 3 *10-4  
1
2
)
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß  
Tested with pulses tp = 300 s, duty cycle 2% – Gemessen mit Impulsen tp = 300 s, Schaltverhältnis 2%  
16  
01.11.2003  

BC856AW 替代型号

型号 品牌 替代类型 描述 数据表
BC856W NXP

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