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BC856AT

更新时间: 2024-01-30 08:32:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
6页 149K
描述
PNP Silicon AF Transistor

BC856AT 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-70包装说明:PLASTIC, SC-70, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.04Is Samacsys:N
最大集电极电流 (IC):0.1 A基于收集器的最大容量:5 pF
集电极-发射极最大电压:65 V配置:SINGLE
最小直流电流增益 (hFE):125JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.65 VBase Number Matches:1

BC856AT 数据手册

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BC856T  
PNP Silicon AF Transistor  
Preliminary data  
3
For AF input stages and driver applications  
High current gain  
Low collector-emitter saturation voltage  
Complementary types: BC 846T  
2
1
VPS05996  
Type  
BC856AT  
BC856BT  
Marking  
3As  
3Bs  
Pin Configuration  
Package  
SC75  
SC75  
1 = B  
1 = B  
2 = E  
3 = C  
2 = E  
3 = C  
Maximum Ratings  
Parameter  
Collector-emitter voltage  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
DC collector current  
Symbol  
Value  
65  
80  
Unit  
V
V
CEO  
V
CBO  
V
80  
5
100  
200  
250  
150  
CES  
V
EBO  
I
mA  
mA  
mW  
°C  
C
Peak collector current  
I
CM  
P
Total power dissipation, T = 109 °C  
Junction temperature  
tot  
S
T
j
Storage temperature  
T
-65 ... 150  
stg  
Thermal Resistance  
Junction - soldering point  
1)  
R
165  
K/W  
thJS  
1
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
1
Jan-08-2002  

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