生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | unknown | 风险等级: | 5.56 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 65 V |
配置: | SEPARATE, 2 ELEMENTS | 最小直流电流增益 (hFE): | 125 |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 2 |
端子数量: | 6 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 参考标准: | AEC-Q101 |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC856ASQ | DIODES |
获取价格 |
Dual PNP, 65V, 0.1A, SOT363 | |
BC856AT | INFINEON |
获取价格 |
PNP Silicon AF Transistor | |
BC856AT | CENTRAL |
获取价格 |
SURFACE MOUNT PNP SILICON TRANSISTOR | |
BC856AT | NXP |
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PNP general purpose transistors | |
BC856AT | YANGJIE |
获取价格 |
SOT-523 | |
BC856AT | BL Galaxy Electrical |
获取价格 |
65V,0.1A,General Purpose PNP Bipolar Transistor | |
BC856AT/R | ETC |
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TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 100MA I(C) | TO-236AA | |
BC856ATA | DIODES |
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Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon | |
BC856A-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BC856A-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |