5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 小信号双极晶体管> BC856AS
BC856AS PDF预览

BC856AS

更新时间： 2024-11-18 08:49:55
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 227K
描述
DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

阅读下载

中文翻译

获取价格

BC856AS 数据手册

 浏览型号BC856AS的Datasheet PDF文件第2页浏览型号BC856AS的Datasheet PDF文件第3页 
BC856AS  
DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
A
•
•
•
•
•
Ideally Suited for Automatic Insertion  
For Switching and AF Amplifier Applications  
Complementary NPN Types Available (BC846AS)  
Lead Free/RoHS Compliant (Note 1)  
"Green" Device (Note 4 and 5)  
SOT-363  
Dim  
A
B
C
D
F
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
C
B
Mechanical Data  
•
•
Case: SOT-363  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
H
0.65 Nominal  
0.30  
1.80  
⎯
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
K
J
M
H
J
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
L
D
E2  
F
K
L
0.90  
0.25  
0.10  
0°  
C1  
6
B2  
5
4
•
•
•
•
Pin Connections: See Diagram  
Marking Codes: See Page 3  
Ordering & Date Code Information: See Page 3  
Weight: 0.006 grams (approximate)  
M
α
1
3
2
All Dimensions in mm  
C2  
E1  
B1  
Top View  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Peak Collector Current  
Peak Emitter Current  
Symbol  
Value  
-80  
-65  
-5.0  
-100  
-200  
-200  
200  
Unit  
V
V
VCBO  
VCEO  
VEBO  
IC  
ICM  
IEM  
V
mA  
mA  
mA  
mW  
°C/W  
°C  
Power Dissipation  
(Note 2)  
(Note 2)  
Pd  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
625  
Rθ  
JA  
-65 to +150  
Tj, Tstg  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
hFE  
Min  
-80  
-65  
-5  
Typ  
—
—
—
180  
Max  
—
—
—
250  
Unit  
V
V
V
—
Test Condition  
C = 10μA, IB = 0  
C = 10mA, IB = 0  
E = 1μA, IC = 0  
(Note 3)  
(Note 3)  
(Note 3)  
(Note 3)  
I
I
I
125  
V
CE = -5.0V, IC = -2.0mA  
IC = -10mA, IB = -0.5mA  
C = -100mA, IB = -5.0mA  
-75  
-250  
-300  
-650  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Voltage  
(Note 3)  
(Note 3)  
(Note 3)  
—
mV  
mV  
mV  
VCE(SAT)  
VBE(SAT)  
VBE(ON)  
I
IC = -10mA, IB = -0.5mA  
IC = -100mA, IB = -5.0mA  
VCE = -5.0V, IC = -2.0mA  
—
—
-700  
-850  
—
-600  
—
-650  
—
-750  
-820  
V
CE = -5.0V, IC = -10mA  
VCE = -80V  
CB = -30V  
ICES  
ICBO  
ICBO  
—
—
—
—
—
—
-15  
-15  
-4.0  
nA  
nA  
µA  
Collector-Cutoff Current  
(Note 3)  
V
VCB = -30V, TA = 150°C  
VCE = -5.0V, IC = -10mA,  
f = 100MHz  
Gain Bandwidth Product  
100  
—
—
3
—
—
MHz  
pF  
fT  
Collector-Base Capacitance  
CCB  
VCB = -10V, f = 1.0MHz  
Notes:  
1. No purposefully added lead.  
2. Device mounted on FR-4 PCB; pad layout as shown on page 3 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our  
website at http://www.diodes.com/datasheets/ap02001.pdf.  
3. Short duration pulse test used to minimize self-heating effect.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
BC856AS  
© Diodes Incorporated  
DS30834 Rev. 7 - 2  
1 of 3  
www.diodes.com  
123

中文翻译

下载PDF

与BC856AS相关器件

型号 品牌 获取价格 描述 数据表
BC856AS62Z FAIRCHILD

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
BC856AS-7 DIODES

获取价格

 		DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BC856AS-7-F DIODES

获取价格

 		Small Signal Bipolar Transistor
BC856ASQ DIODES

获取价格

 		Dual PNP, 65V, 0.1A, SOT363
BC856AT INFINEON

获取价格

 		PNP Silicon AF Transistor
BC856AT CENTRAL

获取价格

 		SURFACE MOUNT PNP SILICON TRANSISTOR
BC856AT NXP

获取价格

 		PNP general purpose transistors
BC856AT YANGJIE

获取价格

 		SOT-523
BC856AT BL Galaxy Electrical

获取价格

 		65V,0.1A,General Purpose PNP Bipolar Transistor
BC856AT/R ETC

获取价格

 		TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 100MA I(C) | TO-236AA

与BC856AS相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证