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BC856AS

更新时间： 2024-01-29 23:40:20
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 227K
描述
DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

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中文翻译

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BC856AS 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：SC-70包装说明：PLASTIC, SC-70, 3 PIN
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.04Is Samacsys：N
最大集电极电流 (IC)：0.1 A基于收集器的最大容量：5 pF
集电极-发射极最大电压：65 V配置：SINGLE
最小直流电流增益 (hFE)：125JESD-30 代码：R-PDSO-G3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：0.2 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：100 MHz
VCEsat-Max：0.65 VBase Number Matches：1

BC856AS 数据手册

 浏览型号BC856AS的Datasheet PDF文件第2页浏览型号BC856AS的Datasheet PDF文件第3页 
BC856AS  
DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
A
•
•
•
•
•
Ideally Suited for Automatic Insertion  
For Switching and AF Amplifier Applications  
Complementary NPN Types Available (BC846AS)  
Lead Free/RoHS Compliant (Note 1)  
"Green" Device (Note 4 and 5)  
SOT-363  
Dim  
A
B
C
D
F
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
C
B
Mechanical Data  
•
•
Case: SOT-363  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
H
0.65 Nominal  
0.30  
1.80  
⎯
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
K
J
M
H
J
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
L
D
E2  
F
K
L
0.90  
0.25  
0.10  
0°  
C1  
6
B2  
5
4
•
•
•
•
Pin Connections: See Diagram  
Marking Codes: See Page 3  
Ordering & Date Code Information: See Page 3  
Weight: 0.006 grams (approximate)  
M
α
1
3
2
All Dimensions in mm  
C2  
E1  
B1  
Top View  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Peak Collector Current  
Peak Emitter Current  
Symbol  
Value  
-80  
-65  
-5.0  
-100  
-200  
-200  
200  
Unit  
V
V
VCBO  
VCEO  
VEBO  
IC  
ICM  
IEM  
V
mA  
mA  
mA  
mW  
°C/W  
°C  
Power Dissipation  
(Note 2)  
(Note 2)  
Pd  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
625  
Rθ  
JA  
-65 to +150  
Tj, Tstg  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
hFE  
Min  
-80  
-65  
-5  
Typ  
—
—
—
180  
Max  
—
—
—
250  
Unit  
V
V
V
—
Test Condition  
C = 10μA, IB = 0  
C = 10mA, IB = 0  
E = 1μA, IC = 0  
(Note 3)  
(Note 3)  
(Note 3)  
(Note 3)  
I
I
I
125  
V
CE = -5.0V, IC = -2.0mA  
IC = -10mA, IB = -0.5mA  
C = -100mA, IB = -5.0mA  
-75  
-250  
-300  
-650  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Voltage  
(Note 3)  
(Note 3)  
(Note 3)  
—
mV  
mV  
mV  
VCE(SAT)  
VBE(SAT)  
VBE(ON)  
I
IC = -10mA, IB = -0.5mA  
IC = -100mA, IB = -5.0mA  
VCE = -5.0V, IC = -2.0mA  
—
—
-700  
-850  
—
-600  
—
-650  
—
-750  
-820  
V
CE = -5.0V, IC = -10mA  
VCE = -80V  
CB = -30V  
ICES  
ICBO  
ICBO  
—
—
—
—
—
—
-15  
-15  
-4.0  
nA  
nA  
µA  
Collector-Cutoff Current  
(Note 3)  
V
VCB = -30V, TA = 150°C  
VCE = -5.0V, IC = -10mA,  
f = 100MHz  
Gain Bandwidth Product  
100  
—
—
3
—
—
MHz  
pF  
fT  
Collector-Base Capacitance  
CCB  
VCB = -10V, f = 1.0MHz  
Notes:  
1. No purposefully added lead.  
2. Device mounted on FR-4 PCB; pad layout as shown on page 3 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our  
website at http://www.diodes.com/datasheets/ap02001.pdf.  
3. Short duration pulse test used to minimize self-heating effect.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
BC856AS  
© Diodes Incorporated  
DS30834 Rev. 7 - 2  
1 of 3  
www.diodes.com  
123

中文翻译

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