Datasheet > BC856ARTR

BC856ARTR

更新时间： 2024-02-01 17:16:26

品牌	Logo	应用领域
CENTRAL		开关光电二极管晶体管
页数	文件大小	规格书
2页	117K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

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技术参数
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BC856ARTR 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.8
最大集电极电流 (IC)：	0.1 A	集电极-发射极最大电压：	65 V
配置：	SINGLE	最小直流电流增益 (hFE)：	125
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.35 W	子类别：	Other Transistors
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

BC856ARTR 数据手册

BC856 SERIES

BC857 SERIES

BC858 SERIES

Central

Semiconductor Corp.

DESCRIPTION:

SURFACE MOUNT

The CENTRAL SEMICONDUCTOR BC856,

BC857 and BC858 Series types are PNP Silicon

Transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for general purpose switching

and amplifier applications.

PNP SILICON TRANSISTOR

MARKING CODE: PLEASE SEE MARKING

CODE TABLE ON FOLLOWING PAGE

Note: Reverse Lead Codes Available, Add “R” to

the end of the Part # and Marking Code.

SOT-23 CASE

MAXIMUM RATINGS (T =25°C)

SYMBOL

BC858

BC857

BC856

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

5.0

100

200

350

Peak Collector Current

Peak Base Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

J stg

-65 to +150

357

°C

°C/W

ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

µA

= 30V

CBO

EBO

= 30V, T =150°C

4.0

=5.0V

I =10µA (BC858)

100

5.0

CBO

I =10µA (BC857)

I =10µA (BC856)

CBO

I =10mA (BC858)

CEO

I =10mA (BC857)

CEO

I =10mA (BC856)

CEO

I =10µA

EBO

I =10mA, I =0.5mA

0.3

CE(SAT)

BE(ON)

I =100mA, I =5.0mA

0.65

0.75

0.82

I =2.0mA, V =5.0V

0.6

I =10mA, V =5.0V

=5.0V, I =10mA, f=100MHz

=5.0V, I =200µA,

100

MHz

R =2KΩ, f= 1KHz, BW=200Hz

BC856A

BC857A

BC858A

BC856B

BC857B

BC858B

BC857C

BC858C

MIN

125

MAX

250

MIN

220

MAX

475

MIN

420

MAX

=5.0V, I =2.0mA

800

R1 (10-September 2004)

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