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BC856AQB-Q PDF预览

BC856AQB-Q

更新时间: 2024-11-02 11:12:43
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
12页 243K
描述
65 V, 100 mA PNP general-purpose transistorsProduction

BC856AQB-Q 数据手册

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BC856xQB-Q series  
65 V, 100 mA PNP general-purpose transistor  
Rev. 1 — 22 September 2021  
Product data sheet  
1. General description  
PNP general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface-  
Mounted Device (SMD) plastic package with side-wettable flanks.  
Table 1. Product overview  
Type number  
Package  
Nexperia  
SOT8015  
NPN complement:  
JEDEC  
BC856AQB-Q  
BC856BQB-Q  
MO-340BA  
BC846AQB-Q  
BC846BQB-Q  
2. Features and benefits  
High power dissipation capability  
Suitable for Automatic Optical Inspection (AOI) of solder joint  
Smaller footprint compared to conventional leaded SMD packages  
Low package height of 0.5 mm  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
General-purpose switching and amplification  
Space restricted applications  
4. Quick reference data  
Table 2. Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol  
VCEO  
IC  
Parameter  
Conditions  
Min  
Typ  
Max  
-65  
Unit  
V
collector-emitter voltage  
collector current  
peak collector current  
DC current gain  
BC856AQB-Q  
open base  
-
-
-
-
-
-
-100  
-200  
mA  
mA  
ICM  
single pulse; tp ≤ 1 ms  
VCE = -5 V; IC = -2 mA  
hFE  
125  
220  
-
-
250  
475  
BC856BQB-Q  
 
 
 
 

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