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BC856A

更新时间: 2024-11-18 04:34:23
品牌 Logo 应用领域
TAITRON 晶体晶体管
页数 文件大小 规格书
4页 97K
描述
SMD General Purpose Transistor (PNP)

BC856A 数据手册

 浏览型号BC856A的Datasheet PDF文件第2页浏览型号BC856A的Datasheet PDF文件第3页浏览型号BC856A的Datasheet PDF文件第4页 
DATA SHEET  
BC856 SERIES  
PNP GENERAL PURPOSE TRANSISTORS  
Unit: inch (mm)  
SOT- 23  
225 mW  
POWER  
65/45/30 Volts  
VOLTAGE  
FEATURES  
General Purpose Amplifier Applications  
NPN Epitaxial Silicon, Planar Design  
Collector Current IC = -100mA  
.119(3.00)  
.110(2.80)  
Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series  
Pb free product are available : 99% Sn above can meet RoHS environment  
substance directive request  
.083(2.10)  
.066(1.70)  
.006(.15)  
.002(.05)  
MECHANICAL DATA  
.006(.15)MAX  
Case: SOT-23  
.020(.50)  
.014(.35)  
Terminals : Solderable per MIL-STD-750,Method 2026  
Approx Weight: 0.008 grams  
Device Marking :  
BC856A=56A  
BC856B=56B  
BC857A=57A  
BC857B=57B  
BC857C=57C  
BC858A=58A  
BC858B=58B  
BC858C=58C  
BC859B=59B  
BC859C=59C  
3
COLLECTOR  
Top View  
3
Collector  
1
BASE  
1
Base  
2
Emitter  
2
EMITTER  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL BC856  
BC857  
BC858  
BC859 UNITS  
V
Collector-Emitter Voltage  
V
CEO  
CBO  
EBO  
-65  
-80  
-45  
-50  
-30  
Collector-Base Voltage  
V
V
-30  
V
V
Emitter-Base Voltage  
-5  
Collector Current-Continuous  
Max Power Dissipation (Note 1)  
Operating Junction and Storage Temperature Range  
I
C
-100  
225  
mA  
mW  
P
TOT  
T
J
,TSTG  
-50 TO +150  
OC  
PAGE . 1  
STAD-JUL.11.2005  

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