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BC850W PDF预览

BC850W

更新时间: 2024-01-30 21:55:39
品牌 Logo 应用领域
强茂 - PANJIT 晶体晶体管光电二极管放大器
页数 文件大小 规格书
6页 130K
描述
NPN GENERAL PURPOSE TRANSISTORS

BC850W 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.57
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
基于收集器的最大容量:3 pF集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.6 VBase Number Matches:1

BC850W 数据手册

 浏览型号BC850W的Datasheet PDF文件第2页浏览型号BC850W的Datasheet PDF文件第3页浏览型号BC850W的Datasheet PDF文件第4页浏览型号BC850W的Datasheet PDF文件第5页浏览型号BC850W的Datasheet PDF文件第6页 
BC846AW ~ BC850CW  
NPN GENERAL PURPOSE TRANSISTORS  
150 mWatts  
CURRENT  
30/45/65 Volts  
VOLTAGE  
FEATURES  
• General purpose amplifier applications  
• NPN epitaxial silicon, planar design  
• Collector current IC = 100mA  
0.087(2.20)  
0.070(1.80)  
• In compliance with EU RoHS 2002/95/EC directives  
0.054(1.35)  
0.045(1.15)  
MECHANICALDATA  
0.006(0.15)  
0.002(0.05)  
0.056(1.40)  
0.047(1.20)  
• Case: SOT-323, Plastic  
Terminals: Solderable per MIL-STD-750, Method 2026  
• Approx. Weight: 0.0001 ounce, 0.005 gram  
0.004(0.10)MAX.  
0.044(1.10)  
0.035(0.90)  
0.016(0.40)  
0.008(0.20)  
Device Marking:  
BC846AW=46A BC847AW=47A BC848AW=48A  
BC846BW=46B BC847BW=47B BC848BW=48B  
BC849BW=49B BC850BW=50B  
BC847CW=47C BC848CW=48C BC849CW=49C BC850CW=50C  
ABSOLUTE RATINGS  
PARAMETER  
Symbol  
Value  
Units  
BC846W  
BC847W, BC850W  
BC848W, BC849W  
65  
45  
30  
Collector - Emitter Voltage  
Collector - Base Voltage  
V
V
V
CEO  
CBO  
EBO  
V
V
BC846W  
BC847W, BC850W  
BC848W, BC849W  
80  
50  
30  
BC846W  
BC847W, BC850W  
BC848W, BC849W  
6.0  
6.0  
5.0  
Emitter - Base Voltage  
V
Collector Current - Continuous  
I
C
100  
mA  
THERMALCHARACTERISTICS  
PARAMETER  
Symbol  
PTOT  
Value  
150  
Units  
mW  
Max Power Dissipation (Note 1)  
RθJA  
RθJC  
400  
100  
Thermal Resistance  
Junction Temperature  
Storage Temperature  
OC/W  
OC  
TJ  
-55 to 150  
-55 to 150  
TSTG  
OC  
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.  
December 17,2010-REV.00  
PAGE . 1  

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