BC850BLT1G

更新时间： 2024-11-16 08:49:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
13页	126K
描述
General Purpose Transistors

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中文翻译

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数据手册
替代型号

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BC850BLT1G 数据手册

BC846ALT1G Series

General Purpose

Transistors

NPN Silicon

Features

http://onsemi.com

• Moisture Sensitivity Level: 1

• ESD Rating − Human Body Model: >4000 V

ESD Rating − Machine Model: >400 V

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

CEO

CBO

EBO

Vdc

BC846

BC847, BC850

BC848, BC849

Collector−Base Voltage

Vdc

BC846

BC847, BC850

BC848, BC849

SOT−23

CASE 318

STYLE 6

Emitter−Base Voltage

BC846

BC847, BC850

BC848, BC849

6.0

5.0

MARKING DIAGRAM

Collector Current − Continuous

100

mAdc

XX M G

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

XX = Device Code

THERMAL CHARACTERISTICS

= Date Code*

= Pb−Free Package

Characteristic

Symbol

Max

Unit

(Note: Microdot may be in either location)

Total Device Dissipation FR−5 Board,

225

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note 1)

T = 25°C

Derate above 25°C

1.8

mW/°C

°C/W

Thermal Resistance,

556

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 12 of this data sheet.

Junction−to−Ambient (Note 1)

Total Device Dissipation

300

Alumina Substrate (Note 2)

T = 25°C

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance,

417

Junction−to−Ambient (Note 2)

Junction and Storage

Temperature Range

T , T

−55 to

+150

°C

stg

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in 99.5% alumina.

Publication Order Number:

October, 2010 − Rev. 10

BC846ALT1/D

12 3 4 5 6 7...13

中文翻译

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BC850BLT1G 替代型号

型号	品牌	替代类型	描述	数据表
BC850BLT1	ONSEMI	完全替代	General Purpose Transistors(NPN Silicon)
BC847BLT1G	ONSEMI	类似代替	General Purpose Transistors
BC850CLT1G	ONSEMI	类似代替	General Purpose Transistors(NPN Silicon)

与BC850BLT1G相关器件

型号	品牌	获取价格	描述	数据表
BC850BLT3	ONSEMI	获取价格	100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, CASE 318-08, 3 PIN
BC850BMTF	UTC	获取价格	NPN Epitaxial Silicon Transistor
BC850BMTF	ROCHESTER	获取价格	100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE PACKAGE-3
BC850BMTF_11	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor
BC850BR	NXP	获取价格	TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC850BR-TAPE-13	NXP	获取价格	TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC850BR-TAPE-7	NXP	获取价格	TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC850BS62Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
BC850BS62Z	TI	获取价格	NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
BC850BT	INFINEON	获取价格	NPN Silicon AF Transistors

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