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BC848CW PDF预览

BC848CW

更新时间: 2024-02-18 18:00:34
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
5页 585K
描述
NPN General Purpose Transistors

BC848CW 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.56Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):110
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC848CW 数据手册

 浏览型号BC848CW的Datasheet PDF文件第2页浏览型号BC848CW的Datasheet PDF文件第3页浏览型号BC848CW的Datasheet PDF文件第4页浏览型号BC848CW的Datasheet PDF文件第5页 
M C C  
BC846AW/BW  
BC847AW/BW/CW  
BC848AW/BW/CW  
Micro Commercial Components  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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Features  
NPN  
General Purpose  
Transistors  
Low current (max. 100mA)  
Low voltage (max. 65V)  
Case Material:Molded Plastic. UL Flammability Classification  
Rating 94V-0 and MSL Rating 1  
Maximum Ratings  
Operating temperature : -65R to +150R  
Storage temperature : -65R to +150R  
Thermal resistance from junction to ambient*: 625K/W  
SOT-323  
A
D
C
Marking: BC846AW---1A ; BC846BW---1B  
BC847AW---1E ; BC847BW---1F ; BC847CW---1G  
BC848AW---1JS/1J ; BC848BW---1KS/1K ; BC848CW---1LS/1L  
C
B
E
B
Electrical Characteristics @ 25R Unless Otherwise Specified  
Min  
F
E
Symbol  
Parameter  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
Collector-Base Breakdown Voltage  
(IC=10uAdc, IE=0)  
Vdc  
H
G
J
BC846AW/BW  
BC847AW/BW/CW  
BC848AW/BW/CW  
---  
---  
---  
80  
50  
30  
K
DIMENSIONS  
INCHES  
Collector-Emitter Breakdown Voltage  
(IC=10mAdc, IB=0)  
Vdc  
Vdc  
MM  
BC846AW/BW  
BC847AW/BW/CW  
BC848AW/BW/CW  
---  
---  
---  
65  
45  
30  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
.026 Nominal  
.047  
.012  
.000  
.035  
.004  
.012  
MAX  
.087  
.053  
.087  
MIN  
1.80  
1.15  
2.00  
MAX  
2.20  
1.35  
2.20  
NOTE  
Emitter-Base Breakdown Voltage  
(IE=1µAdc, IC=0)  
0.65Nominal  
1.20  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
BC846AW/BW, BC847AW/BW/CW  
---  
---  
---  
---  
---  
6
5
100  
200  
200  
F
.30  
.000  
.90  
.100  
.30  
BC848AW/BW/CW  
G
H
J
IC  
ICM  
IBM  
Collector Current (DC)  
Peak Collector Current  
Peak Base Current  
mAdc  
mAdc  
mAdc  
K
Suggested Solder  
Pad Layout  
0.70  
* Transistor mounted on an FR4 printed-circuit board  
0.90  
1.90  
0.65  
0.65  
www.mccsemi.com  
Revision: 6  
2008/01/01  
1 of 5  

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