5秒后页面跳转
BC848CW PDF预览

BC848CW

更新时间: 2024-01-22 11:38:47
品牌 Logo 应用领域
强茂 - PANJIT 晶体晶体管
页数 文件大小 规格书
6页 117K
描述
NPN GENERAL PURPOSE TRANSISTORS

BC848CW 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.56Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):110
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC848CW 数据手册

 浏览型号BC848CW的Datasheet PDF文件第2页浏览型号BC848CW的Datasheet PDF文件第3页浏览型号BC848CW的Datasheet PDF文件第4页浏览型号BC848CW的Datasheet PDF文件第5页浏览型号BC848CW的Datasheet PDF文件第6页 
DATA SHEET  
BC846W,BC847W,BC848W,BC849W,BC850W SERIES  
NPN GENERAL PURPOSE TRANSISTORS  
Unit: inch (mm)  
SOT-323  
150 mWatts  
CURRENT  
30/45/65 Volts  
VOLTAGE  
FEATURES  
• General purpose amplifier applications  
• NPN epitaxial silicon, planar design  
.087(2.2)  
.070(1.8)  
• Collector current IC = 100mA  
• Both normal and Pb free product are available :  
Normal : 80~95% Sn, 5~20% Pb  
Pb free: 98.5% Sn above  
.054(1.35)  
.045(1.15)  
.006(.15)  
.002(.05)  
.056(1.40)  
.047(1.20)  
MECHANICALDATA  
Case: SOT-323, Plastic  
Terminals: Solderable per MIL-STD-202, Method 208  
Approx. Weight: 0.0052 gram  
.004(.10)MAX.  
D evice M arking:  
.016(.40)  
.078(.20)  
BC 846AW =46A BC 847AW =47A BC 848AW =48A  
BC 846BW =46B BC 847BW =47B BC 848BW =48B BC 849BW =49B BC 850BW =50B  
BC 847C W =47C BC 848C W =48C BC 849C W =49C BC 850C W =50C  
ABSOLUTE RATINGS  
PARAMETER  
BC846  
Symbol  
Value  
Units  
V
65  
45  
30  
Collector - Emitter Voltage  
Collector - Base Voltage  
BC847,BC850  
BC848,BC849  
V
V
V
CEO  
BC846  
BC847,BC850  
BC848,BC849  
80  
50  
30  
CBO  
EBO  
V
BC846  
BC847,BC850  
BC848,BC849  
6.0  
6.0  
5.0  
Emitter - Base Voltage  
V
Collector Current - Continuous  
I
C
100  
mA  
THERMALCHARACTERISTICS  
PARAM ETER  
Sym bol  
Value  
150  
Units  
m W  
M axPowerD issipation (Note 1)  
PTO T  
Therm alResistance ,Junction to Am bient  
Junction Tem perature  
RθJA  
833  
O C /W  
O C  
TJ  
-55 to 150  
-55 to 150  
Storage Tem perature  
TISTG  
O C  
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.  
STAD-JUL.06.2004  
PAGE . 1  

与BC848CW相关器件

型号 品牌 描述 获取价格 数据表
BC848CW-7 ETC TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SOT-323

获取价格

BC848CW-7-F DIODES NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

获取价格

BC848CW-AU PANJIT SOT-323

获取价格

BC848CWE6327 INFINEON Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

获取价格

BC848CWE6327HTSA1 INFINEON Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

获取价格

BC848CWE6433 INFINEON Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,

获取价格