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BC847W-AH PDF预览

BC847W-AH

更新时间: 2024-11-17 14:53:35
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
5页 275K
描述
小信号晶体管

BC847W-AH 数据手册

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BC846W…BC850W-AH  
NPN Silicon Epitaxial Planar Transistor  
Features  
• AEC-Q101 Qualified  
• Halogen and Antimony Free(HAF), RoHS compliant  
Applications  
• For general purpose and switching  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
VCBO  
Value  
Unit  
V
Collector Base Voltage  
BC846W  
80  
50  
30  
30  
50  
BC847W  
BC848W  
BC849W  
BC850W  
Collector Emitter Voltage  
Emitter Base Voltage  
BC846W  
BC847W  
BC848W  
BC849W  
BC850W  
65  
45  
30  
30  
45  
VCEO  
V
V
BC846W  
BC847W  
BC848W  
BC849W  
BC850W  
6
6
5
5
5
VEBO  
Collector Current  
IC  
ICM  
Ptot  
Tj  
100  
200  
mA  
mA  
mW  
Peak Collector Current  
Total Power Dissipation  
Junction Temperature  
Storage Temperature Range  
200  
150  
Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Thermal Resistance, Junction to Ambient 1)  
Symbol  
RθJA  
Max.  
625  
Unit  
/W  
1)Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
®
1 / 5  
Dated: 31/01/2023 Rev: 01  

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