Datasheet > BC847PN

BC847PN

更新时间： 2024-06-27 12:13:01

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描述
Complementary Transistor Array

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中文翻译

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数据手册

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BC847PN 数据手册

SMD Type

Transistors

NPN/PNP Complementary Silicon Transistor Array

BC847PN

SOT-363

■ Features

Unit: mm

+0.1

1.3_-0.1

● Two internal isolated NPN/PNP Transistors in one package

● For Switching and AF Amplifier Applications

● Ultra-Small Surface Mount Package

0.65

+0.05

+0.1

0.1_-0.02

0.3_-0.1

C₁

B₂

E₂

+0.1

2.1_-0.1

1 E1

4 E2

2 B

5 B

3 C

6 C

E₁

B₁

C₂

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-Base Voltage

Symbol

VCBO

VEBO

Rating

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

0.1

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

200

℃

150

Storage Temperature

Tstg

-55 to +150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base Breakdown voltage

Collector-base cutoff current

Emitter-base cutoff current

Symbol

Test conditions

IC = 10μA , IE = 0

Min

Typ Max Unit

V(BR)CBO

V(BR)CEO IC = 10mA , IB = 0

V(BR)EBO IE = 10 μA , IC = 0

ICBO VCB = 30 V , IE = 0

IEBO

hFE

VEB = 5 V , IC = 0

DC current gain

VCE = 5 V , IC = 2 mA

200

100

450

0.6

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

VCE(sat) IC = 100 mA , IB = 5mA

VBE(sat) IC = 100 mA , IB = 5mA

0.9

Cob

VCB=10V,f=1MHz

VCE = 5 V , IC = 10 mA ,

f = 100 MHz

VCE=5V,IC=0.2mA,f=1kHz,

Transition frequency

Noise figure

MHz

Rg=2KΩ,Δf=200Hz

■ Marking

Marking

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