Datasheet > BC847N3

BC847N3

更新时间： 2024-11-28 04:34:23

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
4页	154K
描述
General Purpose NPN Epitaxial Planar Transistor

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数据手册

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BC847N3 数据手册

Spec. No. : C907N3

Issued Date : 2003.07.31

Revised Date :

CYStech Electronics Corp.

Page No. : 1/4

General Purpose NPN Epitaxial Planar Transistor

BC847N3

Description

• The BC847N3 is designed for general purpose switching and amplification applications.

• Complementary to BC857N3.

Features

• Low current, I_C(max)=100mA

• Low voltage, BV_CEO= 45V.

Symbol

Outline

BC847N3

SOT-23

B：Base

C：Collector

E：Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Power Dissipation

V^CBO

V^CEO

V^EBO

I^C

100

200

225

150

°C

I^CP

Junction Temperature

Storage Temperature

Tstg

-55~+150

°C

BC847N3

CYStek Product Specification

12 3 4

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