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BC847CTT1 PDF预览

BC847CTT1

更新时间: 2024-09-25 08:49:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
6页 75K
描述
General Purpose Transistors NPN Silicon

BC847CTT1 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SC-75包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.03
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):420JESD-30 代码:R-PDSO-G3
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC847CTT1 数据手册

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BC847ATT1, BC847BTT1,  
BC847CTT1  
General Purpose  
Transistors  
NPN Silicon  
http://onsemi.com  
These transistors are designed for general purpose amplifier  
applications. They are housed in the SC−75/SOT−416 package which  
is designed for low power surface mount applications.  
COLLECTOR  
3
Features  
1
BASE  
Pb−Free Packages are Available*  
2
EMITTER  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Max  
45  
Unit  
V
V
CEO  
V
CBO  
V
EBO  
3
CASE 463  
SC−75/SOT−41  
50  
V
6.0  
100  
V
2
6
1
STYLE 1  
Collector Current − Continuous  
I
C
mAdc  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
xxM  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation,  
FR−4 Board (Note 1)  
P
D
200  
mW  
xx = Device Code  
M = Date Code  
T = 25°C  
A
Derated above 25°C  
1.6  
mW/°C  
°C/W  
Thermal Resistance,  
R
600  
q
JA  
Junction−to−Ambient (Note 1)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Total Device Dissipation,  
FR−4 Board (Note 2)  
P
D
300  
mW  
T = 25°C  
A
Derated above 25°C  
2.4  
mW/°C  
°C/W  
Thermal Resistance,  
R
400  
q
JA  
Junction−to−Ambient (Note 2)  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
1. FR−4 @ min pad.  
2. FR−4 @ 1.0 × 1.0 in pad.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 1  
BC847ATT1/D  
 

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