Datasheet > BC847CT(SOT-523)

BC847CT(SOT-523)

更新时间： 2024-09-26 04:11:23

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	756K
描述
Transistor

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数据手册

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BC847CT(SOT-523) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

SOT-523 Plastic-Encapsulate Transistors

BC847AT, BT, CT TRANSISTOR (NPN)

SOT-523

FEATURES

Ideally suited for automatic insertion

For Switching and AF Amplifier Applications

1. BASE

2. EMITTER

3. COLLECTOR

MARKING: BC847AT=1E; BC847BT=1F; BC847CT=1G

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

0.1

P_C*

150

-55-150

T_J

℃

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= 10µA, I_E=0

I_C= 10mA, I_B=0

I_E= 1 µA, I_C=0

V_CB=30V

Min

Typ

Max Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector Cutoff Current

220

450

800

0.25

0.6

DC current gain

BC847AT

BC847BT

BC847CT

110

200

420

h_FE

V_CE= 5V, I_C= 2mA

I_C=10mA, I_B=0. 5mA

I_C=100mA, I_B= 5mA

I_C=10mA, I_B=0. 5mA

I_C=100mA, I_B= 5mA

V_CE= 5V, I_C= 2mA

V_CE= 5V, I_C= 10mA

V_CE= 5 V, I_C= 10mA

f=100MHz

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE(sat)

V_BE(on)

0.7

0.9

580

100

660

700

770

Transition frequency

f_T

MHz

Collector output capacitance

Noise figure

C_ob

V_CB=10V,f=1MHz

4.5

BC847BT

BC847CT

_CE=5V,f=1KHZ,

R_S=2KΩ,BW=200HZ

A,May,2011

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